Synthesis of high-quality CdSiP2 polycrystalline materials directly from the constituent elements

Pressure-Assisted Method for the Preparations of High-Quality AaGaS2 and AgGaGeS4 Crystals for Mid-Infrared Laser Applications

“…Since the polynary chalcogenides have complicated phase diagram, the stoichiometry deviations, induced in the process of polycrystalline synthesis and single-crystal growth, usually form the precipitates phase of binary compounds and a multiple nucleation growth, , which make it impossible to directional growth. To avoid the crucible exploding induced by the high vapor pressure of S or P component, the traditional two-temperature vapor transport (TTVT) method − adopts large reaction space and lead to significant stoichiometry deviations in the process of polycrystalline synthesis of pnictide or chalcogenide semiconductors. In this work, a new pressure-assisted technique was performed to prepare stoichiometric AGS and AGGS polycrystalline materials.…”