Synthesis of HPHT diamond containing high concentrations of nitrogen impurities using NaN3 as dopant in metal-carbon system

Liang, Zhongzhu; Jia, Xiaopeng; Hong-yan, MA; Chuan-Yi, Zang; Zhu, Pinwen; Guan, Qingfeng; Kanda, H.

doi:10.1016/j.diamond.2005.06.041

Cited by 90 publications

(45 citation statements)

References 4 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…For this to be done, spectrum normalization is normally carried out by considering that the strength of the intrinsic absorption of the diamond lattice at a wavenumber of 1995 cm -1 is 12.3 [34]. However, to be more accurate, we better followed the formula established by [35] wherein absorption intensities at 1130 cm -1 and the dip at 2120 cm -1 are considered. Figure 2 shows the FTIR spectra of diamond particles of the three qualities here studied.…”

Section: Tablementioning

confidence: 99%

On critical aspects of infiltrated Al/diamond composites for thermal management: Diamond quality versus processing conditions

Monje

Louis

Molina

2014

Composites Part A: Applied Science and Manufacturing

View full text Add to dashboard Cite

Please cite this article as: Monje, I.E., Louis, E., Molina, J.M., On critical aspects of infiltrated Al/diamond composites for thermal management: Diamond quality vs processing conditions, Composites: Part A (2014), doi: http://dx.doi.org/10. 1016/j.compositesa.2014.08.015 This is a PDF file of an unedited manuscript that has been accepted for publication. As a service to our customers we are providing this early version of the manuscript. The manuscript will undergo copyediting, typesetting, and review of the resulting proof before it is published in its final form. Please note that during the production process errors may be discovered which could affect the content, and all legal disclaimers that apply to the journal pertain. TC is mainly governed by the Al-diamond interface characteristics, which are determined by a proper control exerted through processing conditions. Albeit a very low cost and low quality diamond is used, a high value of 667 W/mK has been measured for Al/diamond composites produced under optimized processing conditions. Values above 740 W/mK are reported for the best diamond quality explored in this work. These experimental results, which assign the control over TC mainly to the interface conductance, suggest that many of the limiting values of TC reported in literature for the different explored metal-diamond systems, need to be reconsidered by proper precise control of interface evolution. ON CRITICAL ASPECTS OF INFILTRATED

show abstract

Section: Tablementioning

confidence: 99%

On critical aspects of infiltrated Al/diamond composites for thermal management: Diamond quality versus processing conditions

Monje

Louis

Molina

2014

Composites Part A: Applied Science and Manufacturing

View full text Add to dashboard Cite

show abstract

“…The one-phonon part of each IR spectra was decomposed into two individual spectra characteristic of A-center and C-center using the procedure described in references [13][14][15][16]. The concentrations of A-center and C-center were determined by using the method suggested by Kanda and Yamaoka [16] and Liang et al [7]. The absorption coefficients μ (1282) and μ (1130) were decomposed into those of A-center and C-center using the equations as follows [16]: …”

Section: Resultsmentioning

confidence: 99%

“…Diamond crystals with high N c more than 1000 ppm were successfully synthesized at a quite high pressure (>7.0 GPa) reported by Kanda et al [5] and Borzdov et al [6], but the crystal shape was not complete. In our previous works, green industrial diamond crystals with high N c around 1600-2400 ppm were synthesized using Ba(N 3 ) 2 or NaN 3 additive as nitrogen source [7,8]. As diamond growth rate is so fast and difficult to be controlled in industrial diamond growth pattern, crystal defects and inclusions are excessive.…”

Section: Introductionmentioning

confidence: 99%

Effects of additive NaN3 on the HPHT synthesis of large single crystal diamond grown by TGM

Guo-Feng

Jia

et al. 2010

Sci. China Phys. Mech. Astron.

View full text Add to dashboard Cite

In this paper, large single crystal diamond with perfect shape and high nitrogen concentration approximately 1671-1742 ppm was successfully synthesized by temperature gradient method (TGM) under high pressure and high temperature (HPHT). The HPHT synthesis conditions were about 5.5 GPa and 1500-1550 K. Sodium azide (NaN 3 ) with different amount was added as the source of nitrogen into the synthesis system of high pure graphite and kovar alloy. The effects of additive NaN 3 on crystal growth habit were investigated in detail. The crystal morphology, nitrogen concentration and existing form in synthetic diamond were characterized by means of scanning electron microscope (SEM) and infrared (IR) absorption spectra, respectively. The results show that with an increase of the content of NaN 3 added in the synthesis system, the region of synthesis temperature for high-quality diamond becomes narrow, and crystal growth rate is restricted, whereas the nitrogen concentration in synthetic diamond increases. Nitrogen exists in diamond mainly in dispersed form (C-centers) and partially aggregated form (A-centers). The defects occur more frequently on crystal surface when excessive NaN 3 is added in the synthesis system. HPHT, high nitrogen concentration, TGM, large single crystal diamond

show abstract

“…In an ideal spectrum, the concentration of nitrogen in type Ib diamonds is proportional to the intensity of absorbance at 1130 cm −1 , and the absorption coefficient at this peak can be converted to the nitrogen content multiplied by a factor of 25 [19] . The C N in diamonds was determined using the method suggested by Kanda et al with the following formula [20] Figure 4 shows the dependence of C N on growth conditions. It can be seen that the concentration of nitrogen in diamonds decreases along with the increase of synthesis temperature from 1500 to 1560 K. During the growth process of type Ib diamonds from a carbon-saturated transition metal solvent/catalyst, there is a process of entrance of nitrogen present in the melt materials into the diamond.…”

Section: Methodsmentioning

confidence: 99%

Dependence of nitrogen concentration in type Ib diamonds on synthesis temperature

et al. 2009

View full text Add to dashboard Cite

Synthesis of HPHT diamond containing high concentrations of nitrogen impurities using NaN3 as dopant in metal-carbon system

Cited by 90 publications

References 4 publications

On critical aspects of infiltrated Al/diamond composites for thermal management: Diamond quality versus processing conditions

On critical aspects of infiltrated Al/diamond composites for thermal management: Diamond quality versus processing conditions

Effects of additive NaN3 on the HPHT synthesis of large single crystal diamond grown by TGM

Dependence of nitrogen concentration in type Ib diamonds on synthesis temperature

Contact Info

Product

Resources

About