2018
DOI: 10.1016/j.solmat.2017.06.062
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Synthesis of in-gap band CuGaS2:Cr absorbers and numerical assessment of their performance in solar cells

Abstract: CuGaS2 thin films were obtained by sulfurization of CuGaSe2. CuGaSe2 thin films were first electrodeposited from aqueous solutions containing CuCl2, GaCl3, and H2SeO3 and subsequently annealed at 400 °C for 10 min in forming gas atmosphere and in the presence of molecular sulfur. This sulfurization process resulted in the complete conversion of CuGaSe2 into CuGaS2. The formation of CuGaS2 was proven by X-Ray diffraction and optical spectroscopy. Diffraction peaks of CuGaS2 shifted to higher angles than those o… Show more

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Cited by 20 publications
(10 citation statements)
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“…36,37 and literature results for this material. [37][38][39] The average crystallite size (D) of the annealed CuGaS 2 powder sample was estimated from Debye-Scherrer's Eq. 6 using the full width at half maximum (FWHM) of the more intense reflection line (112) expressed in radians (β): 40…”
Section: Resultsmentioning
confidence: 99%
“…36,37 and literature results for this material. [37][38][39] The average crystallite size (D) of the annealed CuGaS 2 powder sample was estimated from Debye-Scherrer's Eq. 6 using the full width at half maximum (FWHM) of the more intense reflection line (112) expressed in radians (β): 40…”
Section: Resultsmentioning
confidence: 99%
“…35) These materials have been synthesized experimentally. [36][37][38][39] Therefore, these results indicate that Rb-doped CsGeI 3 perovskites should be synthesized by using the suitable synthesis method.…”
mentioning
confidence: 89%
“…It has been considered a promising material due to its wide band gap energy (∼2.4–2.5 eV) and high absorption coefficient for high efficiency tandem solar cell, intermediate band solar cells, and green light emitting diodes. Its bandgap is close to the optimum for the fabrication of intermediate band thin film solar cells, theoretically able to reach value of energy conversion efficiency of ∼63 %, significantly higher than the theoretical value for a single band‐gap solar cell (∼41 %) . CGS films has been deposited by several reported approaches: vacuum‐based techniques, spray pyrolysis, nanocrystalline ink‐based deposition, electrodeposition, etc.…”
Section: Figurementioning
confidence: 99%
“…Its bandgap is close to the optimum for the fabrication of intermediate band thin film solar cells, [3] theoretically able to reach value of energy conversion efficiency of 63 %, significantly higher than the theoretical value for a single band-gap solar cell (~41 %). [4] CGS films has been deposited by several reported approaches: vacuum-based techniques, [5,6] spray pyrolysis, [7] nanocrystalline ink-based deposition, [8,9] electrodeposition, [10] etc. Among these mentioned deposition techniques, electrodeposition offers low-cost equipment, efficient material utilization and scalability for large scale production.…”
Section: Double-pulse Electrodeposition Of Cugas 2 Photovoltaic Thin mentioning
confidence: 99%