Synthesis of in-plane and stacked graphene/hexagonal boron nitride heterostructures by combining with ion beam sputtering deposition and chemical vapor deposition

Abstract

Graphene/hexagonal boron nitride (h-BN) heterostructures have attracted a great deal of attention in recent years due to their unique and complementary properties for use in a wide range of potential applications. However, it still remains a challenge to synthesize large-area high quality samples by a scalable growth method. In this work, we present the synthesis of both in-plane and stacked graphene/h-BN heterostructures on Cu foils by sequentially depositing h-BN via ion beam sputtering deposition (IBSD) and graphene with chemical vapor deposition (CVD). Due to a significant difference in the growth rate of graphene on h-BN and Cu, the in-plane graphene/h-BN heterostructures were rapidly formed on h-BN domain/Cu substrates. The large-area vertically stacked graphene/h-BN heterostructures were obtained by using the continuous h-BN film as a substrate. Furthermore, the well-designed sub-bilayered h-BN substrates provide direct evidence that the monolayered h-BN on Cu exhibits higher catalytic activity than the bilayered h-BN on Cu. The growth method applied here may have great potential in the scalable preparation of large-area high-quality graphene/h-BN heterostructures.

Flexible metal-semiconductor-metal device prototype on wafer-scale thick boron nitride layers grown by MOVPE

“…4(a). For comparison, absorption spectra of 10 nm and 30 nm 2D layered h-BN were included, and they presented strong absorption peak at around 201 nm relating to π − π* interband transition 3, 25 . For 1 µm-thick BN layer, the absorption increases drastically for the wavelengths shorter than 250 nm and goes beyond detection limit below 215 nm (full absorption).…”

Synthesis, structure and applications of graphene-based 2D heterostructures

“…At the same time, direct growth methods can provide much cleaner interfaces than those obtained in mechanical stacked samples, especially when two-step growth approaches are employed. Direct bottom-up growth methods have already been reported for the synthesis of h-BN on top of graphene 68,69 and of graphene on h-BN; [70][71][72][73][74][75][76][77][78][79][80][81][82][83][84] of several TMDs on graphene, including MoS 2 , 69,[85][86][87][88][89][90][91][92][93][94][95][96] WS 2 , [97][98][99][100] MoSe 2 , 101 WSe 2 , 69,90,102,103 105 and of other materials such as GaSe, 106,107 nontransition metal chalcogenides [108][109][110] , single layers of metal oxides such as ZnO, 111 or perovskites 112 on graphene. Most of those methods to synthesize heterostructures have evolved along with the ...…”

Graphene/Si Schottky solar cells: a review of recent advances and prospects

“…In order to avoid the interface contamination and defects arising from the LBL process, they also transferred the directly grown graphene/h-BN heterostructure onto the graphene/h-BN/Si solar cell by one step method. 99 A maximum efficiency of 10.93% was achieved for the graphene/h-BN/Si solar cells by combining the directly grown graphene/h-BN heterostructures with co-doping of graphene with Au nanoparticles and HNO 3 .…”