2024
DOI: 10.1039/d4ra04176c
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Synthesis of InAl-alloyed Ga2O3 nanowires for self-powered ultraviolet detectors by a CVD method

Bei Li,
Zhiyu Dong,
Wei Xu
et al.

Abstract: Ga2O3 is a kind of wide-band gap semiconductor, which has great potential in deep ultraviolet detection because of its high efficiency and fast response.

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