2020
DOI: 10.1080/00150193.2020.1713345
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Synthesis of lead-free (Bi0,5Na0,5)TiO3 thin film by RF magnetron sputtering: Impact of Na on the properties of film

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Cited by 8 publications
(8 citation statements)
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“…First, a bottom electrode of LaNiO 3 (LNO) (200 nm) was sputtered on the Si/SiO 2 substrate. Then, lead-free (Bi 0.5 Na 0.5 )­TiO 3 (BNT) thin films (300 nm) were grown on Si/SiO 2 /LNO by RF magnetron sputtering following a procedure described previously . BNT was crystallized in a perovskite structure with a (100) orientation enhanced by the structure matching between BNT and LNO; no second phase was observed.…”
Section: Methodsmentioning
confidence: 99%
See 1 more Smart Citation
“…First, a bottom electrode of LaNiO 3 (LNO) (200 nm) was sputtered on the Si/SiO 2 substrate. Then, lead-free (Bi 0.5 Na 0.5 )­TiO 3 (BNT) thin films (300 nm) were grown on Si/SiO 2 /LNO by RF magnetron sputtering following a procedure described previously . BNT was crystallized in a perovskite structure with a (100) orientation enhanced by the structure matching between BNT and LNO; no second phase was observed.…”
Section: Methodsmentioning
confidence: 99%
“…Then, lead-free (Bi 0.5 Na 0.5 )TiO 3 (BNT) thin films (300 nm) were grown on Si/SiO 2 /LNO by RF magnetron sputtering following a procedure described previously. 45 BNT was crystallized in a perovskite structure with a (100) orientation enhanced by the structure matching between BNT and LNO; no second phase was observed. The obtained multilayer Si/SiO 2 /LNO/BNT is named BNT in the present study.…”
Section: Syntheses and Preparation Of The Bilayer Composite Synthesis...mentioning
confidence: 99%
“…Therefore, target composition change cannot be a solution in our case. These results are discussed elsewhere 24 . In this work, a new approach will be highlighted in order to control the Bi contents in the film.…”
Section: Introductionmentioning
confidence: 94%
“…[15][16][17] Therefore, the strain responses of piezoelectric thin films are generally smaller than those of their ceramic counterparts and it is fairly difficult to improve the strain responses. [18][19][20][21][22][23][24][25] For example, in 2019, Wang et al reported antiferroelectric Pb 1À3x/2 La x ZrO 3 (PLZ-x) thin films with a strain response of B 0.53%, which is lower than that in PbZrO 3 -based bulk materials. 22 However, regarding the most potential materials with a large strain response, BNTbased materials, a strain response of 0.9% was reported in (1 À x)(Bi 0.5 Na 0.5 )TiO 3 -xSrTiO 3 (BNT-xST) thin films.…”
Section: Introductionmentioning
confidence: 99%