AgBiS2 and Cu3BiS3 were
synthesized
via a microwave-assisted solution route using a deep eutectic solvent
(DES). The DES of choice consists of choline chloride and thiourea,
with thiourea acting as a sulfur source. The DES synthesis route provides
a fast, environmentally friendly, and low-temperature alternative
to high-temperature (HT) synthesis. We compared DES synthesis to the
synthesis from an aqueous solution and determined that the DES is
preferred for the synthesis of Cu3BiS3, while
deionized water is the better solvent for the microwave-assisted synthesis
of AgBiS2. The syntheses of AgBiS2 and Cu3BiS3 proceed via Bi2S3 intermediate
that reacts with the +1 cations in solution when synthesis is carried
out in DES or water. The DES synthesis yields ∼0.5 μm
particles with a rod-like (AgBiS2) or rock-like (Cu3BiS3) morphology. The measured optical indirect
band gap is 0.9 eV for AgBiS2 and 1.21 eV for Cu3BiS3. AgBiS2 powder is thermally stable in
vacuum up to 700 °C as opposed to Cu3BiS3 powder. In situ HT powder X-ray diffraction revealed
that Cu3BiS3 shows structural transitions upon
heating. The transformation of Cu3BiS3 from
the room-temperature P212121 polymorph to the HT polymorph occurs between 100 and 122
°C. The HT polymorph is stable until 476 °C and completely
decomposes to crystalline Cu2S and “Bi2S3” melt at 527 °C. The Cu3BiS3 polymorphic transition at 100 °C is evident from the
measured Seebeck coefficient, resistivity, and thermal conductivity.
Cu3BiS3 is a p-type semiconductor.
The thermoelectric figure of merit, zT, at 230 °C
of the DES-synthesized Cu3BiS3 is comparable
to the previously reported thermoelectric properties of the Cu3BiS3 synthesized via the HT route from elements.