Synthesis of Monolayer MoS2 by CVD Approach

Abstract

Abstract:The monolayer MoS 2 thin film was deposited directly on quartz substrate by chemical vapor deposition (CVD) approach using MoO 3 and sulfur powders as reactants. Raman spectroscopic and photoluminescence (PL) spectroscopic analyses were conducted to evaluate the structural and optical property of the grown MoS 2 thin films. The Raman characteristic peaks in 385cm -1 (E 2g 1 ) and 405cm -1 (A 1g ) prove the grown film is monolayer MoS 2 . In comparision, we also found in some areas of the grown fim is bulk MoS 2 film, the Raman characteristic peaks of which are 384 cm −1 (E 2g 1 ) and 409 cm −1 (A 1g ). And two pronounced emission peaks at 620 and 670 nm were observed in photoluminescence spectrum of monolayer MoS 2 . The results suggest that we synthesize monolayer MoS 2 with optical bandgap of 1.85eV.