Synthesis of N-Doped Graphene by Chemical Vapor Deposition and Its Electrical Properties

Wei, Dacheng; Liu, Yunqi; Wang, Yu; Zhang, Hongliang; Huang, Liping; Yu, Gui

doi:10.1021/nl803279t

Cited by 2,903 publications

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“…All our samples exhibit a prominent D band ( Figure 1c and Figure S1b), whose intensity is reported to reflect the level of N-dopant concentration in the graphene sheets. 17,34,35 The intensities of the D band exhibit a clear reduction in the films grown at higher temperatures ( Figure S1b). In addition, all the Ndoped graphene films display a strong 2D band, indicating that the as-grown films are of high crystal quality ( Figure 1c and Figure S1b).…”

Section: Scanning Tunneling Microscope (Stm) Measurements Were Performentioning

confidence: 99%

“…Ndoped graphene has been employed for various applications including, e.g., realizations of ultracapacitors, 15 lithium batteries, 16 and field-effect transistors. 17 Theoretical calculations and recent experiments have revealed that among the three predominant types of C-N bonding configurations (i.e., graphitic N, pyridinic N, and pyrrolic N configurations) in graphene, [18][19][20][21] only graphitic N-doping (i.e., substitutional N doping) could both bring ntype doping to graphene and preserve high mobility. (Here, it should be noted that other methods, such as atomic hydrogen adsorption, could also induce n-type doping in graphene.…”

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Electron–Hole Symmetry Breaking in Charge Transport in Nitrogen-Doped Graphene

Lin

Rui

et al. 2017

ACS Nano

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Graphitic nitrogen-doped graphene is an excellent platform to study scattering processes of massless Dirac fermions by charged impurities, in which high mobility can be preserved due to the absence of lattice defects through direct substitution of carbon atoms in the graphene lattice by nitrogen atoms. In this work, we report on 2 electrical and magnetotransport measurements of high-quality graphitic nitrogen-doped graphene. We show that the substitutional nitrogen dopants in graphene introduce atomically sharp scatters for electrons but long-range Coulomb scatters for holes and, thus, graphitic nitrogen-doped graphene exhibits clear electron-hole asymmetry in transport properties. Dominant scattering processes of charge carriers in graphitic nitrogen-doped graphene are analyzed. It is shown that the electron-hole asymmetry originates from a distinct difference in intervalley scattering of electrons and holes. We have also carried out the magnetotransport measurements of graphitic nitrogen-doped graphene at different temperatures and the temperature dependences of intervalley scattering, intravalley scattering and phase coherent scattering rates are extracted and discussed. Our results provide an evidence for the electron-hole asymmetry in the intervalley scattering induced by substitutional nitrogen dopants in graphene and shine a light on versatile and potential applications of graphitic nitrogen-doped graphene in electronic and valleytronic devices. KEYWORDS: graphene, charge transport, intervalley scattering, graphitic nitrogen doping, atomically sharp scattering center Graphene, a honeycomb lattice of single layer carbon atoms with a Dirac-like energy dispersion, has attracted extensive interests in recent years owing to its extraordinary charge transport properties and potential applications in electronic devices. [1][2][3][4][5] However, charge impurities universally exist in graphene and influence its electronic properties. [6][7][8][9][10] A particular case is when approaching the Dirac point at which, because of the vanishing density of states, the transport properties of graphene are expected to be highly sensitive to 3 scattering from charged impurities. [6][7][8][9][10] Previous studies of charge carrier scattering in graphene are mainly achieved with the scattering centers introduced by physical methods, such as ion irradiation, 7, 8 adsorption of adlayers, 9 low temperature deposition 10 and spin coating [11][12][13] of nanoparticles, and atomic hydrogen adsorption. 14 These methods could inevitably induce randomness and disorder in graphene and thereby largely degrade its transport properties. Compared with the physical methods, chemical doping has the advantage to achieve scattering centers in graphene with good replicability, lattice stability, and tunablity of doping concentration through the substitution of carbon atoms in the graphene lattice by dopant atoms. Among numerous dopants, nitrogen (N) atoms can be chemically incorporated into graphene forming covalent bonds with carbon (...

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Section: Scanning Tunneling Microscope (Stm) Measurements Were Performentioning

confidence: 99%

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confidence: 99%

Electron–Hole Symmetry Breaking in Charge Transport in Nitrogen-Doped Graphene

Lin

Rui

et al. 2017

ACS Nano

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“…The sheet resistance of N-doped graphene is reported to be higher compared to graphene, which is explained by a n-type semiconductor behavior leading to a decrease in conductivity. 25 The values listed in Table 3 Table 3 Peak positions and linewidths (in cm −1 ) of D, G and D' bands and intensity ratios of D, G, D' and 2D peaks in the Raman spectra (488 nm excitation with 2 mW power) of transferred graphene sheets on glass.…”

Section: Optical and Electronic Characterizationmentioning

confidence: 99%

“…24 So far, few methods for generating N-doped graphene are described. Among these are thermal CVD of methane and ammonia gas, 25 CVD of molecular precursors like pyridine 26 or acetonitrile 27 on a Cu substrate or exposure of graphene to a nitrogen 28 or ammonia 29 containing plasma discharge.…”

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Chemical Vapor Deposition of N-Doped Graphene and Carbon Films: The Role of Precursors and Gas Phase

et al. 2014

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Thermally induced chemical vapor deposition (CVD) was used to study the formation of nitrogen doped graphene and carbon films on copper from aliphatic nitrogen containingprecursors consisting of C 1 -and C 2 -units and (hetero) The deposition of carbon films from the gas phase leads to materials of widely different structure and composition. The films can be i) crystalline, e.g. like graphene, graphite or diamond and consist ideally of a single type of either sp 2 or sp 3 -hybridized carbon atoms, ii) can contain domains of any of these phases in more or less ordered arrangements, or iii) can even incorporate a considerable amount of hydrogen or other heteroatoms. Within this manifold of carbon films, graphene, a two-dimensional allotrope of carbon has recently attained high interest due to its electronic and optical properties and chemical inertness. [1][2][3] Graphene with controllable electronic properties is expected to be a promising material for the development of new electronic devices, 4,5 such as e.g. field-effect transistors 6 or electrochemical sensors, 7,8 as well as for applications in energy storage 9,10 and conversion systems like super capacitors, 11 lithium batteries, 12 and fuel cells. 13 Furthermore, transparent conducting graphene films are considered for organic electronic devices such as OLED's and organic solar cells. 14 Graphene itself does not reveal a band gap and therefore has no intrinsic semiconducting properties. Thus, doping of graphene with heteroelements like boron (B) or nitrogen (N), which fit into the carbon lattice, is an important issue. Theoretical and experimental studies indicate that B-or N-doped graphenes reveal p-or n-type semiconductor characteristics [15][16][17] accompanied by a band gap opening [18][19][20] and thus doped 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 graphene and structurally related graphene nanoribbons are considered as promising materials with tunable electronic properties. 21,22 N-Doped graphene, and particularly B-doped graphene are still scarcely investigated experimentally as compared to graphene 23 and graphene oxide. 24 So far, few methods for generating N-doped graphene are described. Among these are thermal CVD of methane and ammonia gas, 25 CVD of molecular precursors like pyridine 26 or acetonitrile 27 on a Cu substrate or exposure of graphene to a nitrogen 28 or ammonia 29 containing plasma discharge.In these reactions, the presence of nitrogen was identified by XPS, whereas the mechanism for nitrogen incorporation at specific positions of the graphene lattice is still not understood. 15,16,30 Recently, the formation mechanism of graphene from molecular precursors has been investigated. From the decay it was reasoned that dicarbon (C 2 -) species, formed as reaction intermediates, can contribute significantly to the built-up of graphene. 31 Sin...

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“…Compared to traditional doping processes (e.g., chemical vapor deposition; segregation growth and post treatment, etc. ), the conditions employed for this thermal process were relatively mild 10. In this study, the sodium storage properties of S‐SG and pristine SG have been investigated.…”

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confidence: 99%

Solvothermal‐Derived S‐Doped Graphene as an Anode Material for Sodium‐Ion Batteries

et al. 2018

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Sodium‐ion batteries (SIBs) have attracted enormous attention in recent years due to the high abundance and low cost of sodium. However, in contrast to lithium‐ion batteries, conventional graphite is unsuitable for SIB anodes because it is much more difficult to intercolate the larger Na ions into graphite layers. Therefore, it is critical to develop new anode materials for SIBs for practical use. Here, heteroatom‐doped graphene with high doping levels and disordered structures is prepared using a simple and economical thermal process. The solvothermal‐derived graphene shows excellent performance as an anode material for SIBs. It exhibits a high reversible capacity of 380 mAh g−1 after 300 cycles at 100 mA g−1, excellent rate performance 217 mAh g−1 at 3200 mA g−1, and superior cycling performance at 2.0 A g−1 during 1000 cycles with negligible capacity fade.

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Synthesis of N-Doped Graphene by Chemical Vapor Deposition and Its Electrical Properties

Cited by 2,903 publications

References 71 publications

Electron–Hole Symmetry Breaking in Charge Transport in Nitrogen-Doped Graphene

Electron–Hole Symmetry Breaking in Charge Transport in Nitrogen-Doped Graphene

Chemical Vapor Deposition of N-Doped Graphene and Carbon Films: The Role of Precursors and Gas Phase

Solvothermal‐Derived S‐Doped Graphene as an Anode Material for Sodium‐Ion Batteries

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