Synthesis of nano-patterned and Nickel Silicide embedded amorphous Si thin layer by ion implantation for higher efficiency solar devices

Bhowmik, Dipak; Bhattacharjee, Subhro; Lavanyakumar, D.; Naik, Vaishali; Satpati, Biswarup; Karmakar, Prasanta

doi:10.1016/j.apsusc.2017.05.250

Cited by 14 publications

(5 citation statements)

References 23 publications

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“…1−4 Besides the applications in microelectronics, the Ni silicides were also applied as a general hydrogenation catalyst, 5 excellent photosensors, 6 nanowire transistors, 7,8 and solar devices. 9,10 The different nickel deposition methods, such as physical vapor deposition (PVD), chemical vapor deposition (CVD), and electroplating, influence the mechanical, electrical, and chemical properties. Nowadays, fabrication of Ni-based thin films draws a lot of research interest because of their broad and modern applications.…”

Section: Introductionmentioning

confidence: 99%

“…The semiconductor industry has been growing fast in the latest decades, and the minimization of electronic devices dominates the entire development process. The applications of the Ni silicides are important among the device manufacturing technologies due to their low resistivity and low lattice mismatch to Si substrates. − Besides the applications in microelectronics, the Ni silicides were also applied as a general hydrogenation catalyst, excellent photosensors, nanowire transistors, , and solar devices. , The different nickel deposition methods, such as physical vapor deposition (PVD), chemical vapor deposition (CVD), and electroplating, influence the mechanical, electrical, and chemical properties. Nowadays, fabrication of Ni-based thin films draws a lot of research interest because of their broad and modern applications.…”

Section: Introductionmentioning

confidence: 99%

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Transformation and Control of Crystal Structures on Electronic Thin Films

Chang,

Chen,

Chang

et al. 2024

Crystal Growth & Design

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The deposition of Ni film on the Si substrate is important due to its broad applications in electronics, especially at the nanoscale. In this study, we applied molecular dynamics simulations to perform a subatomic observation simultaneously during the process of sputtering Ni on crystalline Si, and a model according to the Thompson formula was developed to simulate the energy distribution of ejected atoms during sputtering. We found the critical parameters controlling interdiffusion behavior were substrate temperature and incident flux of Ni. The substrate temperature significantly leads the crystallinity of the Ni film, where they exhibit amorphous, FCC, and BCC structures at substrate temperatures below 400, 500−600, and beyond 700 K, respectively. The incident flux dominates the crystallinity of the deposited Ni film. Only amorphous Ni forms with 10 atom/ps flux, and fewer defects in the FCC Ni film were observed with 2.5 atom/ps flux. To balance the throughputs and film quality, an incident flux of 2.5 atom/ps is the optimized choice. The detailed understanding enables the control of thin films during electronic fabrication.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Transformation and Control of Crystal Structures on Electronic Thin Films

Chang,

Chen,

Chang

et al. 2024

Crystal Growth & Design

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“…[13] The heterostructure containing Ni silicide was also applied to build excellent photosensors, [14] ultrashortchannel nanowire transistors, [15,16] and higher efficiency solar devices. [17,18] Nonetheless, the applications of Ni silicides as electrodes still draw a lot of attention recently. [19][20][21][22] As a result, the combustion and thermal behavior of large-area Ni/Si RMLs with different compositions were studied in this research.…”

Section: Introductionmentioning

confidence: 99%

Control of Large‐Scale Single‐Phase Ni Silicide Formation from Reactive Multilayers

et al. 2022

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The Ni/Si reactive multilayer (RML) is full of application potentials including reactive joining, igniters, and power sources. Here, the Ni/Si RMLs with atomic ratios of Ni and Si (2:1, 1:1, and 1:2) are studied, where the bilayer thickness and the total thickness are controlled to be 53 nm and 2 μm, respectively. After laser ignition, a rapid explosive reaction is observed where there are two self‐propagation wavefronts and their velocities reach 7.20 and 11.93 m s−1. The uniform, small grains, and single‐phase Ni silicides are obtained and controlled by tuning growth parameters. From the understanding of the Gibbs free energy diagram, the first wavefront comes from the solid‐state amorphization reaction between the Ni and a‐Si. The formation of the final Ni silicide causes the second wavefront. The entire reaction is described by a transient heat transfer model. It proposes a key parameter called heat loss rate, which explains the importance of RML thickness and the thermal diffusivity of the substrate. It allows to accurately control the reaction rate, which masters the final silicide phase. Thus, the oxidation of samples downgrades the reliability as the self‐propagation velocity of the two wavefronts dropped to 1.34 and 1.91 m s−1 in samples after 200 h of oxidation.

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“…Ion beam induced structural and chemical modifications at the surface and near-surface region have become very useful for the development of advanced waveguides, sensors, electronic, optoelectronic, and photovoltaic devices [1][2][3][4][5][6]. The reactive ion beam irradiation leads to grow a nano-patterns on the surface which have different chemical phases due to reaction with the target atoms [7][8][9]. Nano-patterning and chemical phase formation on the surface have been investigated in several ways, such as inert and reactive ions bombardment [10,11], * Author to whom any correspondence should be addressed.…”

Section: Introductionmentioning

confidence: 99%

“…However, the growth of surface patterns and chemical phases by simultaneous irradiation of multiple reactive ions is interesting and challenging. Such ion bombardment on a solid surface is also advantageous for multiple chemical phase formation [7,17,18].…”

Section: Introductionmentioning

confidence: 99%

Spatially varying chemical phase formation on silicon nano ripple by low energy mixed ions bombardment

Mukherjee¹,

Bhowmik²,

Bhattacharjee³

et al. 2022

J. Phys.: Condens. Matter

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We report mixed (CO+ and N2+) ion beam induced spatially varying chemical phases formation on Si (100) surface in nanometer length scale. Simultaneous bombardment of carbon, oxygen and nitrogen like three reactive ions leads to well-defined ripple development and spatially varying periodic chemical phases formation. Post bombardment chemical changes of Si surface are investigated by X-ray Photoelectron Spectroscopy (XPS), and spatially resolved periodic variation of chemical phases are confirmed by Electron Energy Loss Spectroscopy (EELS). The thickness of ion modified amorphous layer, estimated by Monte Carlo Simulation (SRIM), is in excellent agreement with the cross-sectional Transmission Electron Microscopy measurements. The formation of such periodic nanoscale ripple having multiple chemical phases at different parts is explained in terms of chemical instability, local ion flux variation and difference in sputtering yield. Potential applications of such newly developed nano material are also addressed.

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Synthesis of nano-patterned and Nickel Silicide embedded amorphous Si thin layer by ion implantation for higher efficiency solar devices

Cited by 14 publications

References 23 publications

Transformation and Control of Crystal Structures on Electronic Thin Films

Transformation and Control of Crystal Structures on Electronic Thin Films

Control of Large‐Scale Single‐Phase Ni Silicide Formation from Reactive Multilayers

Spatially varying chemical phase formation on silicon nano ripple by low energy mixed ions bombardment

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