Synthesis of nanocrystalline silicon carbonitride films by remote plasma enhanced chemical vapor deposition using the mixture of hexamethyldisilazane with helium and ammonia

Chemical modification and the attending surface hardness of low alloy steel through medium energy nitrogen ion implantation

“…A critical examination of the Si 2p line (with peak centred around 103 eV and large FWHM of ∼3 eV) suggest that the Si is covalently bonded probably with C and N. These indicate that a possible sp 3 bonds in (C,Si) N bonds could be promoted by the doping action of Si and this imposed structural change was responsible for the different chemical composition we observed in the N 2 + implanted steel. This explanation is consistent with the recent report of the preparation of ultra hard (35 GPa) crystalline silicon carbo-nitride [16][17][18].…”

“…Anyway there are now serious doubts [16] as to the true existence of a crystalline carbon nitride as predicted. However more evidences [17,18] are being advanced for the existence of stoichiometric silicon carbo-nitride. We further examined the nature of the C and N bonds in the modified layer and compared with current understandings in carbon nitride films.…”

Thin silicon carbonitride films are perspective low-k materials

“…The synthesis was carried out by remote plasma enhanced decomposition of HMDS as single-source precursor using two gas mixtures: (HMDS+He) and (HMDS+NH 3 +He) in the temperature range 600-1073 K and total pressure of (4-6) Â 10 À2 Torr in reactor [5]. Initial P NH3 /P HMDS ratios were equal to 0.3, 0.73, 1.0, 1.7, and 2.1.…”

Tris(diethylamino)silane—A new precursor compound for obtaining layers of silicon carbonitride

“…Silicon carbonitride layers have been grown by means of different methods, namely, chemical vapor deposition (CVD) at higher temperatures [17][18][19][20], use of hot filament chemical vapor deposition [21], plasma enhanced chemical vapor deposition (PECVD) [22][23][24][25][26][27][28][29][30], microwave plasma enhanced chemical vapor deposition (PECVD) [31][32][33][34][35], elec tron cyclotron resonance plasma enhanced chemical vapor deposition (PECVD) [11,12], pulsed laser dep osition [4,13], ion beam sputtering [3,36,37], and reactive magnetron sputtering [7,[38][39][40][41][42][43][44].…”