“…The EDXS spectrum in Figure D shows the incorporation of V into the thin film, along with the presence of Bi, Sn, O, and C elements. Figure E illustrates the diffraction peak intensity at 2θ = 18.9, 28.9, 30.5, 35.2, 40, 42.4, 46, 47.2, 53.2, 58.5, and 59.4 which corresponds to (⟨101⟩, ⟨112⟩, ⟨004⟩, ⟨020⟩, ⟨−121⟩, ⟨015⟩, ⟨015⟩, ⟨204⟩, ⟨024⟩, ⟨116⟩, ⟨303⟩, and ⟨132⟩) planes, respectively, which depicts the monoclinic scheelite structure of BiVO 4 . , The crystallite size obtained from the XRD peaks when using the Scherrer equation is approximately 28 nm. The diffusion length of the hole of BiVO 4 single crystal at a wavelength of 400 nm has been estimated as ∼100 nm and reported by other researchers. , Therefore, the nanoporosity incorporated into g-BiVO 4 /FTO electrodes in this study appears to be ideal for effectively suppressing bulk carrier recombination due to short diffusion path length.…”