2012
DOI: 10.1166/jnn.2012.5344
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Synthesis of Novel Photoacid Generator Containing Resist Polymer for Electron Beam Lithography

Abstract: Photoacid generators (PAGs) have been widely used as a key material in the development of novel photoresist materials. One of the important uses of PAGs is found in chemically amplified photoresists (CARs) because of their high photosensitivity and high resolution capability. Triphenylsulfonium salt methacrylate (TPSMA) as the PAG has been bounded in the main polymer backbone. TPSMA was employed for synthesis of terpolymers, poly(MMA-co-tBVPC-co-TPSMA) and poly(tBVPC-co-tBOCPOMI-co-TPSMA) as a positive tone ph… Show more

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Cited by 7 publications
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“…Both electron beam lithography (EBL) and extreme ultraviolet lithography (EUVL) are advanced lithography technologies that are capable of achieving high-resolution patterns below 20 nm. , Consequently, steady improvement of resist materials for high-resolution lithography is of paramount importance. Chemically amplified resists (CARs) have been the primary materials used in the semiconductor industry due to their excellent sensitivity for lithography. ,, In CARs, photoacid generators (PAGs) produce acid after exposure, which catalyzes the deprotection reaction of the acid-sensitive group, resulting in the solubility switch. However, the poor line-edge roughness (LER) due to the acid diffusion and the uneven distribution of PAGs leads to the resolution limitation . The trade-off relationship among resolution, LER, and sensitivity demonstrates the limitations of CARs. , Researchers have attempted to bind PAG to the skeleton of materials to avoid nonuniform acid distribution and uncontrolled diffusion. Yamamoto et al reported a series of polymer-bound PAG resists, achieving a 50 nm HP pattern with a line width roughness (LWR) of 3.9 nm. The patterning ability of the resist was significantly improved compared with the polymer-blended PAG resist (75 nm HP and LWR = 6.1 nm) .…”
Section: Introductionmentioning
confidence: 99%
“…Both electron beam lithography (EBL) and extreme ultraviolet lithography (EUVL) are advanced lithography technologies that are capable of achieving high-resolution patterns below 20 nm. , Consequently, steady improvement of resist materials for high-resolution lithography is of paramount importance. Chemically amplified resists (CARs) have been the primary materials used in the semiconductor industry due to their excellent sensitivity for lithography. ,, In CARs, photoacid generators (PAGs) produce acid after exposure, which catalyzes the deprotection reaction of the acid-sensitive group, resulting in the solubility switch. However, the poor line-edge roughness (LER) due to the acid diffusion and the uneven distribution of PAGs leads to the resolution limitation . The trade-off relationship among resolution, LER, and sensitivity demonstrates the limitations of CARs. , Researchers have attempted to bind PAG to the skeleton of materials to avoid nonuniform acid distribution and uncontrolled diffusion. Yamamoto et al reported a series of polymer-bound PAG resists, achieving a 50 nm HP pattern with a line width roughness (LWR) of 3.9 nm. The patterning ability of the resist was significantly improved compared with the polymer-blended PAG resist (75 nm HP and LWR = 6.1 nm) .…”
Section: Introductionmentioning
confidence: 99%