2019
DOI: 10.1002/ppap.201900203
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Synthesis of p‐type N‐doped TiO2 thin films by co‐reactive magnetron sputtering

Abstract: Tandem dye‐sensitized solar cell devices (t‐DSSCs) are a potential alternative to Si‐based solar cells as autonomous power sources. Nevertheless, their further development suffers from the poor quality of the p‐type material, that is, NiO. In this study, N‐doped TiO2 thin films exhibiting a p‐type conductivity (p‐TiO2:N) are successfully grown by co‐reactive magnetron sputtering. Its p‐type conductivity is correlated to the incorporation of N atoms in substitutional positions which is controllable by carefully… Show more

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Cited by 12 publications
(4 citation statements)
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“…In Figure 4b, compared with FS-NT (0 mL), two additional peaks of binding energy were observed at 396.8eV and 405.4eV, respectively. N 1s peaks at 396.8 eV were attributed to substitutional nitrogen (O-Ti-N) [27,29,30], while a binding energy of 405.4eV may be attributed to interstitial nitrogen [29,31,32]. The results are consistent with those of XRD and SAED.…”
Section: Resultssupporting
confidence: 83%
“…In Figure 4b, compared with FS-NT (0 mL), two additional peaks of binding energy were observed at 396.8eV and 405.4eV, respectively. N 1s peaks at 396.8 eV were attributed to substitutional nitrogen (O-Ti-N) [27,29,30], while a binding energy of 405.4eV may be attributed to interstitial nitrogen [29,31,32]. The results are consistent with those of XRD and SAED.…”
Section: Resultssupporting
confidence: 83%
“…The monitoring of the nitrogen atom location, especially the substitutional sites, is complex as the actual positions appear to be strongly dependent on the doping method. Indeed, the components at binding energies of 400 eV and higher, as well as that at ∼398 eV, are preponderant for samples prepared via gaseous nitrification of TiO 2 under NH 3 environnement and via wet methods, such as sol–gel and hydrolysis processes. , On the other hand, N-doped TiO 2 obtained by dry methods such as ion implantation, atomic layer deposition, , and reactive magnetron sputtering , exhibit both the 402 and 396 eV components. Here also, the variations in the N atom location as a function of the synthesis methods would be better explained if the N position was clearly established.…”
Section: Introductionmentioning
confidence: 99%
“…The electronic mobility of ZnO calculated by PBE is almost 2 times larger than the experimental result, and the hole is 13 times smaller. In experiment, electron and hole mobilities in TiO2 are 18.6 cm 2 V -1 s -1 [74] and 3.1 cm 2 V -1 s -1 [75], respectively. Therefore, the mobility of electrons and holes in TiO2 calculated in PBE is 10 times larger than the experimental results.…”
Section: Mobilitymentioning
confidence: 99%