Synthesis of PbS Thin Film by Dip Coating Technique for Sensitization of Large band gap Semiconductor

Abstract

Thin film of Lead sulfide (PbS) is synthesized via low cost dip coating technique using precursors Pb(NO3)2 and thiourea for lead ions Pb+2 and sulfide ions S-2 respectively. The film is synthesized in alkaline medium. The as grown films onto glass slides were characterized by atomic force microscopy and UV-vis spectroscopy. The AFM image shows agglomeration of particles. The band gap value estimated from the UV-vis spectra as 1.49 eV. The photoelectrochemical (PEC) performance of cell was estimated in two electrode configuration. The thin film of PbS in PEC cell exhibited efficiency of 0.09% with fill-factor of 41% in polysulfide solution.