Synthesis of Scandium Nitride Crystals from Indium–Scandium Melts

Abstract

The synthesis of scandium nitride (ScN) nanoscale crystals by dissolving N2 into In‐Sc melts is demonstrated for the first time. The crystallization mechanism of ScN from In‐Sc melts is investigated. In the N2 pressure of 0.3 MPa, the ScN yield increases with the Sc concentration in flux and the growth temperature within the range 900–1100°C, achieving a maximum value of about 70% at temperatures above 1100°C. Scanning electron microscopy evidences the growth of round‐shaped ScN crystals with increasing average size from 48 to 860 nm in the temperature range of 900–1300°C. This study shows that Sc effectively promotes the dissolution of N2 in the In‐Sc melt, and In‐Sc is a promising flux for the synthesis of ScN nanocrystals.