Synthesis of Self-Assembled Randomly Oriented VO₂ Nanowires on a Glass Substrate by a Spin Coating Method

Abstract

Randomly oriented vanadium dioxide (VO 2 ) nanowires were produced on a glass substrate by spin coating from a cosolvent. SEM studies reveal that highly dense VO 2 nanowires were grown at an annealing temperature of 400 °C. X-ray diffraction (XRD) provides evidence of the high crystallinity of the VO 2 nanowires-embedded VO 2 thin films on the glass substrate at 400 °C. Characterization by high-resolution transmission electron microscopy (HR-TEM) confirmed the formation of VO 2 nanowires. The optical band gap of the nanowires-embedded VO 2 thin films was also calculated from the transmittance data to be 2.65− 2.70 eV. The growth mechanism of the solution-processed semiconducting VO 2 nanowires was proposed based on both solvent selection and annealing temperature. Finally, the solar water splitting ability of the VO 2 nanowires-embedded VO 2 thin films was demonstrated in a photoelectrochemical cell (PEC).

Stress-induced phase-alteration in solution processed indium selenide thin films during annealing

“… 34 It is also observed from the both figures that at wavelength around 676 nm there is a small unwanted bump which was generated due to instrumental error. 46 The absorption spectra for both phases are shown in Fig. S4 in ESI.…”

A batch processed titanium–vanadium oxide nanocomposite based solid-state electrochemical sensor for zeptomolar nucleic acid detection

“…The V 2 O 5 precursor solution was prepared by mixing 1-butanol (C 4 H 9 OH) and benzyl alcohol (C 6 H 5 CH 2 OH) solvents in a volume ratio of 1 : 9 and gradually adding 1 wt% of VO(acac) 2 salt into the mixture. 41 The solution was kept overnight stirring at 45 °C with a rotation of 350 RPM. The solution color turns bottle green after the salt was dissolved.…”

Nanoelectronics Using Metal–Insulator Transition

“…Many strategies for depositing epitaxial Mott insulator or synthesizing low dimensional Mott insulator have been utilized using RF sputtering, [12] PLD, [253] and solution process. [254] However, controlling the oxygen compositional ratio is challenging, since the oxygen partial pressure can be changeable depending on the deposited accumulation elements attached at the chamber wall or target condition. Persistent attention for this processing factor must be performed to control the oxygen partial pressure.…”