Synthesis of Si Nanowires by Electroless Etching Technique and Their Integration Into I-III-VI₂ Thin Films For Solar Cells

Abstract

Si nanowires (NWs) have been fabricated by Ag-assisted electroless etching technique using an HF/AgNO 3 aqueous solution. Scanning electron microscopy (SEM) measurements have revealed that a highly dense array of Si NWs with length of ~1.4 μm is formed over the surface of both n-type and p-type Si (100) substrates. Following the fabrication of Si NWs, electronbeam evaporated p-type AgGa 0.5 In 0.5 Se 2 thin film was deposited on the n-type Si NWs to form pn heterojunction solar cells. The fabricated solar cells yield a 5.50% power conversion efficiency under AM (1.5) illumination.