Synthesis of silicon carbide coating on diamond by microwave heating of diamond and silicon powder: A heteroepitaxial growth

Leparoux, Susanne; Diot, C.; Dubach, Alban; Vaucher, S.

doi:10.1016/j.scriptamat.2007.06.016

Cited by 20 publications

(8 citation statements)

References 9 publications

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“…Some dielectric and semiconductor materials such as SiC and Si have been reported to be successfully coated on the surface of diamond [7][8]12]. Compared with metal coatings, these coatings possess higher thermal stability under both air and inert atmosphere, and can also provide high adhesion with diamond.…”

Section: Fig 3 Interfacial Thermal Conductance (Itc) (A) and Thermamentioning

confidence: 99%

“…So far, various metals and ceramics (Cu, Ni, Ti, Mo, Cr, TiC, SiC, Si, etc.) have been reported to be the effective interfacial coatings for diamond/metal composites [7][8][9][10][11][12]. However, the interfacial coating can act as an interfacial thermal barrier, especially for coatings with large thickness, and it is necessary to evaluate the effect of the interfacial coatings on the thermal properties of diamond/metal composites.…”

Section: Introductionmentioning

confidence: 99%

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Predicted interfacial thermal conductance and thermal conductivity of diamond/Al composites with various interfacial coatings

et al. 2011

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The interfacial thermal conductance (ITC) and thermal conductivity (TC) of diamond/Al composites with various coatings were theoretically studied and discussed. A series of predictions and numerical analyses were performed to investigate the effect of thickness, sound velocity, and other parameters of coating layers on the ITC and TC. It is found that both the ITC and TC decline with increasing coating thickness, especially for the coatings with relatively low thermal conductivity. Nevertheless, if the coating thickness is close to zero, or quite a small value, the ITC and TC are mainly determined by the constants of the coating material. Under this condition, coatings such as Ni, TiC, Mo 2 C, SiC, and Si can significantly improve the ITC and TC of diamond/Al composites. By contrast, coatings like Ag will exert the negative effect. Taking the optimization of interfacial bonding into account, conductive carbides such as TiC or Mo 2 C with low thickness can be the most suitable coatings for diamond/Al composites.

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Section: Fig 3 Interfacial Thermal Conductance (Itc) (A) and Thermamentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Predicted interfacial thermal conductance and thermal conductivity of diamond/Al composites with various interfacial coatings

et al. 2011

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“…The diamond-SiC composites can be fabricated via hightemperature high-pressure sintering of diamond and Si [6-9], infiltration of diamond compacts with precursor gas [10] and more recently by microwave reactive sintering of diamondsilicon powders mixtures [11,12]. In contrast to the conventional processes, microwave sintering has the advantage of internal and phase-selective heat generation which offers high sintering rates [13].…”

Section: Introductionmentioning

confidence: 99%

“…Numerous investigations have been carried out on the structure of SiCdiamond interfaces [5][6][7][8][9]. However, to the best knowledge of the authors, the growth mechanism of SiC crystals grown on differently oriented diamond surfaces has not been studied and experimentally verified.The diamond-SiC composites can be fabricated via hightemperature high-pressure sintering of diamond and Si [6-9], infiltration of diamond compacts with precursor gas [10] and more recently by microwave reactive sintering of diamondsilicon powders mixtures [11,12]. In contrast to the conventional processes, microwave sintering has the advantage of internal and phase-selective heat generation which offers high sintering rates [13].…”

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confidence: 99%

Mechanism of SiC crystals growth on {100} and {111} diamond surfaces upon microwave heating

Unifantowicz

Vaucher

Lewandowska

et al. 2010

Materials Characterization

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The subject of this work is focused on characterization of the microstructures and orientations of SiC crystals synthesized in diamond-SiC-Si composites using reactive microwave sintering. The SiC crystals grown on the surfaces of diamonds have either shapes of cubes or hexagonal prisms, dependent on crystallographic orientation of diamond. The selection of a specified plane in diamond lattice for the TEM investigations IntroductionDiamond-SiC composites are considered one of the most promising materials for thermal management applications. In contrast with metal-based diamond composites, diamond-SiC potentially combine high thermal conductivity and relatively low coefficient of thermal expansion of two phases each having a low density. Chemical bonding between the diamond particles and the SiC should be provided by a reaction between carbon and silicon to form 'bridges' structurally integrated with diamond. However, the thermal resistance of SiC-diamond interfaces should be minimised to ensure efficient heat transport in the interconnected diamonds [1,2]. This can be achieved by providing defect-free, coherent interfaces between the diamond and the SiC lattices. It should be noted that the SiC crystals can grow on diamond either in an ordered fashion, resulting in highly strained epitaxial layers, low energy semi-coherent configurations [3,4] or through high-misfit interfaces with lattice defects minimizing the strain energy [5]. Numerous investigations have been carried out on the structure of SiCdiamond interfaces [5][6][7][8][9]. However, to the best knowledge of the authors, the growth mechanism of SiC crystals grown on differently oriented diamond surfaces has not been studied and experimentally verified.The diamond-SiC composites can be fabricated via hightemperature high-pressure sintering of diamond and Si [6-9], infiltration of diamond compacts with precursor gas [10] and more recently by microwave reactive sintering of diamondsilicon powders mixtures [11,12]. In contrast to the conventional processes, microwave sintering has the advantage of internal and phase-selective heat generation which offers high sintering rates [13]. Since silicon has a much higher dielectric loss than diamond, it more readily absorbs microwave energy and is preferentially heated to temperatures above its melting point [14]. The higher heating rate facilitated

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“…These composites are produced in HTHP process [2], GPI or squeeze-casting [3], [4] and, more recently, by reactive microwave sintering [5]. The latter enables selective absorption of microwave energy by Si, preventing graphitization of diamond.…”

Section: Introductionmentioning

confidence: 99%

FEM Modeling of Structure and Properties of Diamond-SiC-(Al) Composites Developed for Thermal Management Applications

Unifantowicz¹,

Boguszewski²,

Ciupiński³

et al. 2008

Advanced Materials Research

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Thermal management materials frequently have multi-phase composite character with complex architecture of the constituents. As a result, design rules are needed which can be used in selection of the phases and optimizing their volume fractions. The study shows that such are provided by finite element modeling of these composites. This is demonstrated for a diamond-SiC-Si-(Al) composites, which have been optimized in terms of the volume fraction of SiC, contact area between the components and presence of open porosity. IntroductionWorldwide research in the field of thermal management materials has lead to development of high thermally conductive diamond-based composites. Among them, diamond-SiC have potentially a high thermal conductivity (>400 W/m/K), low density and, in contrast to the metal-based composites, CTE matched to the one of silicon [1].These composites are produced in HTHP process [2], GPI or squeeze-casting [3], [4] and, more recently, by reactive microwave sintering [5]. The latter enables selective absorption of microwave energy by Si, preventing graphitization of diamond. The as-grown SiC provides a mechanical stability of the composite and a path for heat transport between the diamonds. However, the composites obtained by microwave sintering of Si and diamond powders are characterized by a complex structure, Fig. 1, which needs to be optimized for their industrial applications.The goal of this work is to develop a model which could be used to predict the effective thermal conductivity of diamond-SiC-Si porous and infiltrated composites with varying microstructures. To this end, a finite element method (FEM) has been used with representative unit cell shown in Fig.2. The FEM is a universal tool which can be applied to problems with various types of load, including mechanical, thermal stresses [6] or heat [7] and this method was used in the current work.

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Synthesis of silicon carbide coating on diamond by microwave heating of diamond and silicon powder: A heteroepitaxial growth

Cited by 20 publications

References 9 publications

Predicted interfacial thermal conductance and thermal conductivity of diamond/Al composites with various interfacial coatings

Predicted interfacial thermal conductance and thermal conductivity of diamond/Al composites with various interfacial coatings

Mechanism of SiC crystals growth on {100} and {111} diamond surfaces upon microwave heating

FEM Modeling of Structure and Properties of Diamond-SiC-(Al) Composites Developed for Thermal Management Applications

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