Synthesis of single-crystalline wurtzite aluminum nitride nanowires by direct arc discharge

Shen, Longhai; Li, X.F.; Zhang, Jingwei; Ma, Yiming; Wang, Feng; GuiLan, Peng; Cui, Qiliang; Zou, Guangtian

doi:10.1007/s00339-006-3580-6

Cited by 37 publications

(16 citation statements)

References 16 publications

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“…1),4), 5) 1-D AlN nanostructures (nanofibers, 6) nanowhiskers, 7) nanowires, 8)- 10) nanotubes, 11) nanotips 12) and nanobelts 13) have been synthesized by several methods, including chemical vapor deposition, carbothermal reduction reaction and direct nitridation of Al powders.…”

Section: Introductionmentioning

confidence: 99%

Combustion synthesis of rod-like AlN nanoparticles

Shi

Radwan

Kirihara

et al. 2008

J. Ceram. Soc. Japan

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Section: Introductionmentioning

confidence: 99%

Combustion synthesis of rod-like AlN nanoparticles

Shi

Radwan

Kirihara

et al. 2008

J. Ceram. Soc. Japan

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“…This value is similar to those previously measured in TEM studies of AlN nanowires and other nanoparticles. 18,22,23 The initial oxygen and hydrogen concentrations of the as-received AlN powders in the present study were 0.82 wt% and 237 ppm respectively (1.0 x 10 21 O/cm 3 and 4.7 x 10 20 H/cm 3 ), as measured by inert gas fusion. The atomic ratio of O/H is 2.2 suggesting most of the oxygen is present as AlOOH, since it has a O/H ratio of 2.0.…”

Section: Resultsmentioning

confidence: 53%

“…Examing published high resolution transmission electron micrographs of AlN nanoparticles by Panchula and Yang, 18 Shen et al, 22 Kim, 23 and others suggests that the native oxide/hydroxide is 1.5 nm to 3 nm thick.…”

Section: Introductionmentioning

confidence: 99%

Native oxide and hydroxides and their implications for bulk AlN crystal growth

Edgar

Nyakiti

et al. 2008

Journal of Crystal Growth

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Oxygen degrades the properties of AlN, thus producing bulk single crystals with low oxygen concentrations is an important goal. Most of the oxygen in bulk AlN single crystals grown by the sublimation-recondensation method originates from the hydroxides and oxides that spontaneously form on the surfaces of the AlN source powder. For a typical AlN powder with an average particle size of 1-2 microns, a 1-3 nm thick oxide and/or hydroxide can account for most of its oxygen (generally on the order of 1.0 wt%) and hydrogen (200-300 ppm). Heating the AlN powder source at 1950 °C for 10 h in a nitrogen atmosphere reduced its surface area by a factor of 160 (due to sintering), the oxygen concentration by 16, and the hydrogen concentration by 67. The difference in these reduction factors suggests some of the oxygen is dissolved into the bulk AlN with this heat treatment. By first annealing the AlN powder at a low temperature (950-1000 °C) for several hours before sintering at 1950 °C, the oxygen and hydrogen concentrations were reduced to lower levels. The low temperature treatment is effective eliminating oxygen and hydrogen from the surface of the powder, while high temperature sintering reduces the specific surface area of the source. The combination of heat treatments produced a source with oxygen and hydrogen concentrations as low as 0.015 wt% O (1.9 x 10 19 atoms O cm -3 ) and 1.7 ppm H (3.4 x 10 18 atoms H cm -3 ). Annealing becomes less effective at removing oxygen and hydrogen with longer heat treatments, suggesting there is a minimum oxygen concentration that can be produced with this method.

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“…However, there has been rare report on the properties and associated mechanisms of PL emission. Along with its high surface/volume ratio and high crystallinity which is favorable for light-emitting devices, 1D nanostructures of AlN have been the focus of widespread attention due to their prospective applications in optoelectronic and field-emission nanodevices [4][5][6]. In the present study, a simple and effective technique was introduced, in which AlN structures are successfully fabricated via the direct reaction of Al and NH 3 .…”

Section: Introductionmentioning

confidence: 99%