Synthesis of SmB<sub>6</sub>films by Mg-assisted solid state reaction

Takagaki, Y.; Wirsig, A.; Ramsteiner, M.; Jenichen, B.; Jahn, U.

doi:10.1088/0268-1242/29/7/075016

Cited by 5 publications

(6 citation statements)

References 28 publications

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“…The result is shown in Fig 1d. Three modes T 2g , E g and A 1g from SmB 6 (cubic structure with the Pm3m symmetry) are seen in addition to the Si substrate peak at 510 cm -1 [Ref. 35]. The wavenumbers of these three peaks are consistent with those from the single crystals.…”

mentioning

confidence: 67%

Composition-spread Growth and the Robust Topological Surface State of Kondo Insulator SmB6 Thin Films

Yong¹,

Jiang²,

Usanmaz³

et al. 2014

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Topological insulators are a class of materials with insulating bulk but protected conducting surfaces due to the combination of spin-orbit interactions and time-reversal symmetry. The surface states are topologically non-trivial and robust against non-magnetic backscattering, leading to interesting physics and potential quantum computing applications 1, 2 . Recently there has been a fast growing interest in samarium hexboride (SmB 6 ), a Kondo insulator predicted to be the first example of a correlated topological insulator 3, 4 . Here we fabricated smooth thin films of nanocrystalline SmB 6 films. Their transport behavior indeed shows that SmB 6 is a bulk insulator with topological surface states. Upon decreasing the temperature, the resistivity ρ of Sm 0.14 B 0.86 (SmB 6 ) films display significant increase below 50 K due to hybridization gap formation, and it shows a saturation behavior below 10 K. The saturated resistance of our textured films is similar to that of the single crystals, suggesting that this conduction is from the Polycrystalline films can be characterized using X-ray detector with an area detector. With a fixed angle between incident X-ray and the sample, the area detector can detect diffractions that come from the grains of different orientations in the sample. Polycrystalline films will show a broad ring (Fig. S1) in the detector while single crystal show a very broad spot (the incident angle must satisfy Bragg's law) which need to be avoided. Integration of the data along chi direction can be carried out to obtain θ -2θ XRD plots ( Fig.1b and Fig. S2)

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confidence: 67%

Composition-spread Growth and the Robust Topological Surface State of Kondo Insulator SmB6 Thin Films

Yong¹,

Jiang²,

Usanmaz³

et al. 2014

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“…As shown in figure 1(e), a streak pattern emerged on the InAs(001) surface as a consequence of the exposure. Similar to the emergence of corrugations on the InP(001) surface [17], the etching of the InAs (001) surface by the Bi 2 Te 3 flux was highly anisotropic between the [110] and [11 ¯0] directions of InAs plausibly reflecting the different configurations of the surface bonds. Similar again to the case on the InP(111)B surface, the etching produced triangle-shaped pits on the InAs(111)B surface, as shown in the top panel of figure 1(f).…”

Section: Iii-v Compound Semiconductor Substratesmentioning

confidence: 82%

“…In fact, the substitution is suggested to occur for Bi 2 Te 3 , at least, for certain circumstances based on our observation that InP surfaces are etched when they are exposed to a Bi 2 Te 3 flux at high temperatures [17]. It is speculated that In-Te compounds are generated on the InP surfaces by the substitution but they sublimate rather than form islands in the high temperature environment.…”

Section: Iii-v Compound Semiconductor Substratesmentioning

confidence: 90%

“…For this purpose, we examine situations where Bi 2 Te 3 and Sb 2 Te 3 layers were deposited. Bi 2 Te 3 layers grow semicoherently on the InP(111) substrates as the lattice mismatch of the Bi 2 Te 3 (0001) plane to the InP(111) surface is relatively small, 5.6% [17]. While Bi 2 Se 3 is converted to In 2 Se 3 on damaged InP surfaces by the substitution, we have so far observed no direct substitution for Bi 2 Te 3 layers on InP not only for ordered surfaces but also for damaged surfaces.…”

Section: Iii-v Compound Semiconductor Substratesmentioning

confidence: 99%

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Element substitution from substrates in Bi₂Se₃, Bi₂Te₃and Sb₂Te₃overlayers deposited by hot wall epitaxy

Takagaki¹,

Jahn²,

Jenichen³

et al. 2014

Semicond. Sci. Technol.

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In depositing Bi 2 Se 3 , Bi 2 Te 3 or Sb 2 Te 3 layers on certain substrates by hot wall epitaxy, the Bi and Sb atoms in the layers are replaced by the atoms supplied from the substrates. We extend our exploration on this substitution phenomenon for a number of combinations of the layer and the substrate to infer the factors that determine the occurrence of the substitution. Using a series of Ga-and In-based III-V substrates, it is evidenced that the group III atoms substitute the group V overlayer atoms when the bonds in the substrates are weak. We demonstrate that Ag triggers the substitution more effectively than Cu as a catalyst. The competition between the catalyst-induced substitutions on ternary alloy substrates shows that the dependence on the bond strength is not as strong as to be exclusive. Additionally, defectiveness around the interface between a semicoherently grown α-In 2 Se 3 layer produced by the substitution and the InAs substrate is demonstrated. The cathodeluminescence properties are also provided focusing on the dependence on the phase of In 2 Se 3 .

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“…SmB 6 is an intermediate valence material characterized by an energy gap near the Fermi level like a semiconductor . It is also a fluctuating valence Kondo insulator that is predicted to be a topological Kondo insulator . However, convincing experimental evidence verifying this behavior is lacking, partly due to the difficulty in obtaining high purity and homogeneous SmB 6 single crystals.…”

Section: Introductionmentioning

confidence: 99%

Synthesis, densification, microstructure, and mechanical properties of samarium hexaboride ceramic

Fahrenholtz

Hor

2018

J Am Ceram Soc

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Samarium hexaboride (SmB6) powders were synthesized by boro/carbothermal reduction of Sm2O3 with B4C. Nominally pure SmB6 powder had a mean particle size of about 400 nm and an oxygen content of 0.12 wt%. SmBO3 formed as an intermediate phase during the synthesis. The synthesized powder was hot pressed at 1950°C to produce SmB6 ceramics with relative densities >99.6% and a mean grain size of 4.4 μm. Vickers’ hardness was 20.1 ± 0.7 GPa. Young's modulus measured by bending and ultrasonic methods was 271 and 244 GPa, respectively. The flexure strength was 253 ± 79 MPa and fracture toughness was 2.1 ± 0.1 MPa m1/2. These are the first reported results of the microstructure and bulk mechanical behavior of SmB6 ceramics.

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Synthesis of SmB₆films by Mg-assisted solid state reaction

Cited by 5 publications

References 28 publications

Composition-spread Growth and the Robust Topological Surface State of Kondo Insulator SmB6 Thin Films

Composition-spread Growth and the Robust Topological Surface State of Kondo Insulator SmB6 Thin Films

Element substitution from substrates in Bi₂Se₃, Bi₂Te₃and Sb₂Te₃overlayers deposited by hot wall epitaxy

Synthesis, densification, microstructure, and mechanical properties of samarium hexaboride ceramic

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Synthesis of SmB6films by Mg-assisted solid state reaction

Cited by 5 publications

References 28 publications

Composition-spread Growth and the Robust Topological Surface State of Kondo Insulator SmB6 Thin Films

Composition-spread Growth and the Robust Topological Surface State of Kondo Insulator SmB6 Thin Films

Element substitution from substrates in Bi2Se3, Bi2Te3and Sb2Te3overlayers deposited by hot wall epitaxy

Synthesis, densification, microstructure, and mechanical properties of samarium hexaboride ceramic

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Synthesis of SmB₆films by Mg-assisted solid state reaction

Element substitution from substrates in Bi₂Se₃, Bi₂Te₃and Sb₂Te₃overlayers deposited by hot wall epitaxy