Synthesis of SnO2 Thin Coatings by Indium and Aluminum Mixed Doping using the Sol-Gel Spin-Coating Technique

Munandar, Haris; Doyan, Aris; Susilawati, Susilawati

doi:10.29303/jppipa.v6i2.391

Cited by 7 publications

(6 citation statements)

References 17 publications

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“…The thin layer synthesis process is carried out through several stages such as substrate-preparation, sol-gel fabrication, thin layer fabrication on substrates, and the sample heating process (Doyan et al, 2022;Munandar et al, 2020). Substrate-preparation was carried out by washing and soaking the glass substrate using several materials such as soap, detergent, and aquades before drying by heating in the oven.…”

Section: Methodsmentioning

confidence: 99%

Analysis of the Energy Band Gap of Tin Oxide Thin Layers as Semiconductor Base Materials in Electronic Devices

Doyan

Susilawati

Muliyadi³

2022

jppipa, pendidikan ipa, fisika, biologi, kimia

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The purpose of this study is to analyze the quality of optical properties such as energy band gap of thin layer of tin oxide doped with aluminum, tin oxide doped with fluorine, tin oxide doped with indium, tin oxide doped with aluminum-fluorine, tin oxide doped with aluminum-indium, and tin oxide doped with aluminum-fluorine-indium. The thin layer was synthesized using the sol-gel spin coating method. The ratio of basic ingredients and doping used in this study was 95:5% and 85:15%. The thin layer that has been formed is then heated at a temperature of 100 and 200 0C. The results of the analysis of optical properties showed that the largest values of direct and indirect energy band gap are in a thin layer of tin oxide doped with indium at a percentage of 95:5% for a temperature of 100 0C, namely 3.62 and 3.92 eV. The lowest values of direct and indirect energy band gap are in a thin layer of tin oxide doped with aluminum-fluorine-indium at a percentage of 85:15% for a temperature of 200 0C, namely 3.36 and 3.51 eV. These results indicate that the resulting energy band gap decreases with increasing doping concentration and sintering temperature. Based on the optical properties obtained, the thin layer can be used as the basic material for semiconductors in electronic devices.

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Section: Methodsmentioning

confidence: 99%

Analysis of the Energy Band Gap of Tin Oxide Thin Layers as Semiconductor Base Materials in Electronic Devices

Doyan

Susilawati

Muliyadi³

2022

jppipa, pendidikan ipa, fisika, biologi, kimia

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“…Selain itu penelitian ini menggunakan doping campuran antara Fluorin dan Indium. Penambahan doping Fluorin diharapkan dapat meningkatkan aktivitas fotokatalitik TiO2 pada radiasi cahaya tampak (Doyan, et al 2020;Muliyadi, et al 2019). Sedangkan penambahan doping Indium mampu menurunkan energi gap pada lapisan tipis dan energi aktivasinya seiring dengan peningkatan konsentrasi doping (Munandar, et al 2020).…”

Section: Pendahuluanunclassified

“…Penambahan doping Fluorin diharapkan dapat meningkatkan aktivitas fotokatalitik TiO2 pada radiasi cahaya tampak (Doyan, et al 2020;Muliyadi, et al 2019). Sedangkan penambahan doping Indium mampu menurunkan energi gap pada lapisan tipis dan energi aktivasinya seiring dengan peningkatan konsentrasi doping (Munandar, et al 2020). Berdasarkan permasalahan di atas dilakukan penelitian sintesis lapisan tipis tipis TiO2 doping campuran Indium dan Fluorin dengan metode spin-coating dengan tujuan agar dapat menghasilkan lapisan tipis yang memiliki kualitas penyerapan yang baik untuk digunakan sebagai komponen lapisan absorben pada sel surya.…”

Section: Pendahuluanunclassified

SINTESIS LAPISAN TIPIS TiO2:(F+In) PADA SUBSTRAT KACA DENGAN METODE SPIN-COATING SEBAGAI BAHAN SEL SURYA

Rizaldi¹,

Doyan²,

Susilawati³

2021

ORBITA

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ABSTRAKTelah dilakukan penelitian sintesis lapisan tipis TiO2 dengan doping campuran Fluorin dan Indium. Tujuan penelitian ini untuk menghasilkan lapisan tipis yang baik digunakan sebagai salah satu komponen pada sel surya yaitu lapisan absorben. Sintesis lapisan tipis menggunakan metode spin-coating dengan bantuan alat centrifuge yang dimodifikasi. Penelitian ini dilaksanakan di Laboratorium Kimia Dasar dan Kimia Organik, Fakultas Matematika dan Ilmu Pengetahuan Alam, Universitas Mataram. Jenis penelitian ini adalah penelitian eksperimen murni dengan data dianalisis secara deskriptif. Proses sintesis lapisan tipis terdiri dari beberapa tahapan yaitu 1). Persiapan substrat, 2). Pembuatan larutan sol-gel, 3). Deposisi lapisan tipis, dan 4). Pemanasan sampel lapisan tipis. Sampel lapisan tipis diberikan tiga perlakuan berbeda yang terdiri dari 1). Konsentrasi larutan, 2). Jumlah lapisan, dan 3). Variasi suhu pemanasan sampel. Berdasarkan penelitian yang sudah dilakukan didapatkan bahwa semakin besar konsentrasi doping yang digunakan maka semakin gelap permukaan sampel lapisan tipis yang dihasilkan. Kata kunci: sintesis lapisan tipis; TiO2:(F+In); metode spin-coating; sel surya. ABSTRACTResearch on the synthesis of TiO2 thin films with doping mixture of Fluorine and Indium has been carried out. The aim of this research is to produce a thin film which is suitable for use as a component of solar cells, namely the absorbent layer. Synthesis of thin films using the spin-coating method with the help of a modified centrifuge. This research was conducted at the Laboratory of Basic Chemistry and Organic Chemistry, Faculty of Mathematics and Natural Sciences, Mataram University. This type of research is pure experimental research with data analyzed descriptively. The thin layer synthesis process consists of several stages, namely 1). Substrate preparation, 2). Preparation of sol-gel solution, 3). Thin layer deposition, and 4). Heating the thin layer sample. The thin layer sample was given three different treatments consisting of 1). The concentration of the solution, 2). Number of layers, and 3). Variation in sample heating temperature. Based on the research that has been done, it was found that the greater the doping concentration used, the darker the surface of the resulting thin layer sample. Keywords: synthesis thin film, TiO2:(F+In), spin-coating method, solar cells

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“…To increase the ability of Titanium Dioxide in the absorption process, a doping process is carried out using a mixture of Fluorine and Indium. The addition of a mixture of Fluorine and Indium doping is expected to increase the photocatalytic activity of visible light radiation [10], reduce the energy band gap and activation energy [11,12,13], increase chemical stability, absorption, and reduce the resistance of the thin film so that it has high sensitivity [14].…”

Section: Introductionmentioning

confidence: 99%

Structure and optical properties of Titanium Dioxide thin film with mixed Fluorine and Indium doping for solar cell components

Doyan

Susilawati

Mahardika

et al. 2022

J. Phys.: Conf. Ser.

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Research has been carried out in the form of the synthesis of a thin film of Titanium Dioxide with a mixture of Fluorine and Indium doping. The purpose of this research is to obtain the characteristics of a thin filmphotocatalyst with a crystal structure and optical properties that can be applied to solar cell components. This research was carried out in two stages, namely the synthesis stage and the thin filmcharacterization stage. The TiO2 thin film synthesis stage is through the substrate preparation process, sol-gel solution preparation, thin film deposition, and heating process, while the thin-film characterization stage uses X-Rays Diffraction (XRD) to identify crystal properties and UV-VisSpectrophotometer to determine optical properties of a thin film of TiO2 and TiO2:(F+In). Based on data analysis and discussion, XRD test results showed that the thin film of TiO2:(F+In) has an Anatase phase with a tetragonal shape, and has an average crystal size that is getting smaller from 23.14 to 12.17 nm. Based on the results of research, data analysis, and discussion, it was found that the sample of TiO2 : (F+In) has characteristics that can be used as materials in the development of solar cell components. These characteristics are like 1). havenano-sized particles, 2). have a low transmittance value and high absorbance in absorbing sunlight, and 3). have a low activation energy and energy gap (direct and indirect).

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Synthesis of SnO2 Thin Coatings by Indium and Aluminum Mixed Doping using the Sol-Gel Spin-Coating Technique

Cited by 7 publications

References 17 publications

Analysis of the Energy Band Gap of Tin Oxide Thin Layers as Semiconductor Base Materials in Electronic Devices

Analysis of the Energy Band Gap of Tin Oxide Thin Layers as Semiconductor Base Materials in Electronic Devices

SINTESIS LAPISAN TIPIS TiO2:(F+In) PADA SUBSTRAT KACA DENGAN METODE SPIN-COATING SEBAGAI BAHAN SEL SURYA

Structure and optical properties of Titanium Dioxide thin film with mixed Fluorine and Indium doping for solar cell components

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