Synthesis of superconducting boron-doped diamond compacts with high elastic moduli and thermal stability

Екимов, Е. А.; Ralchenko, V. G.; Попович, А. Ф.

doi:10.1016/j.diamond.2014.09.001

Cited by 30 publications

(11 citation statements)

References 26 publications

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“…However, this deformation becomes noticeably large at higher pressure, as indicated by the error bars. The impressively large B 0 in our CVD grown superconducting BDD thick film is noteworthy and although this value is smaller than the optical grade polycrystalline diamond films [50], it is certainly larger than HPHT-grown BDD [51,52] or cubic BC 5 [53]. B 0 depend significantly on the grain sizes [54,55].…”

Section: High-pressure X-ray Diffractionmentioning

confidence: 84%

High-pressure behavior of superconducting boron-doped diamond

et al. 2017

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This work investigates the high-pressure structure of freestanding superconducting ($T_{c}$ = 4.3\,K) boron doped diamond (BDD) and how it affects the electronic and vibrational properties using Raman spectroscopy and x-ray diffraction in the 0-30\,GPa range. High-pressure Raman scattering experiments revealed an abrupt change in the linear pressure coefficients and the grain boundary components undergo an irreversible phase change at 14\,GPa. We show that the blue shift in the pressure-dependent vibrational modes correlates with the negative pressure coefficient of $T_{c}$ in BDD. The analysis of x-ray diffraction data determines the equation of state of the BDD film, revealing a high bulk modulus of $B_{0}$=510$\pm$28\,GPa. The comparative analysis of high-pressure data clarified that the sp$^{2}$ carbons in the grain boundaries transform into hexagonal diamond.Comment: 7 pages, 4 figure

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Section: High-pressure X-ray Diffractionmentioning

confidence: 84%

High-pressure behavior of superconducting boron-doped diamond

et al. 2017

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“…The maximum increase was recorded in [11,12]. As a result of the graphite-diamond phase transition, polycrystals with the unit cell parameters of 3.574-3.577 Å were formed, with the content of boron in these polycrystals being estimated at 3-4 wt %.…”

Section: Introductionmentioning

confidence: 97%

Heavily Boron Doped Diamond Powder: Synthesis and Rietveld Refinement

Зибров

Филоненко

2018

Crystals

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Boron-doped diamonds were synthesized by the reaction of an amorphous globular carbon powder (80%) with a powder of 1,7-di (oxymethyl)-M-carborane (20%) in a 'toroid'-type high-pressure chamber at a pressure of 8.0 GPa and temperature of 1700 • C. The structure was refined by the Rietveld method according to the X-ray powder diffraction data. It was shown that the unit cell parameters of these diamonds have two discrete quantities: around 3.570 Å for small concentrations of B (~1-1.5%) and around 3.578 Å for large concentrations of B (~2-3%). The concentration of the vacancies in the diamonds exceeds the concentration of boron atoms by 2-3 fold. This fact can play an important role in the formation of the structure and in determining the physical properties of diamonds.

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“…Down‐shifted diamond line at 1310 cm −1 and local phonon modes at 500, 1000, and 1200 cm −1 , typical for heavily boron‐doped diamond , are observed in spectra of samples synthesized at 1600 and 1400 °C. Narrow peaks at 480 and 530 cm −1 , and broad 700, 820, 1000, 1100, and 1130 cm −1 bands, characteristic of boron carbide B 4 C synthesized at high pressures , are detected in spectra of samples obtained at 1600 °C.…”

Section: Resultsmentioning

confidence: 95%

The effect of molecular structure of organic compound on the direct high‐pressure synthesis of boron‐doped nanodiamond

Екимов

Kudryavtsev

Turner

et al. 2016

Physica Status Solidi (a)

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Evolution of crystalline phases with temperature has been studied in materials produced by high-pressure high-temperature treatment of 9-borabicyclo[3.3.1]nonane dimer (9BBN), triphenylborane and trimesitylborane. The boron-doped diamond nanoparticles with a size below 10 nm were obtained at 8-9 GPa and temperatures 970-1250 8C from 9BBN only. Bridged structure and the presence of boron atom in the carbon cycle of 9BBN were revealed to be a key point for the direct synthesis of doped diamond nanocrystals. The diffusional transformation of the disordered carbon phase is suggested to be the main mechanism of the nanodiamond formation from 9BBN in the temperature range of 970-1400 8C. Aqueous suspensions of primary boron-doped diamond nanocrystals were prepared upon removal of non-diamond phases that opens wide opportunities for application of this new nanomaterial in electronics and biotechnologies.

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Synthesis of superconducting boron-doped diamond compacts with high elastic moduli and thermal stability

Cited by 30 publications

References 26 publications

High-pressure behavior of superconducting boron-doped diamond

High-pressure behavior of superconducting boron-doped diamond

Heavily Boron Doped Diamond Powder: Synthesis and Rietveld Refinement

The effect of molecular structure of organic compound on the direct high‐pressure synthesis of boron‐doped nanodiamond

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