Synthesis of the superlattice complex oxide Sr5Bi4Ti8O27 and its band gap behavior

Zurbuchen, M. A.; Podraza, Nikolas J.; Schubert, J.; Jia, Yan; Schlom, D. G.

doi:10.1063/1.4722942

Cited by 9 publications

(7 citation statements)

References 35 publications

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“…In non-magnetic Aurivillius Sr mÀ3 Bi 4 Ti m O 3mþ3 (SBTi) system, [16][17][18][19][20] period as large as m ¼ 8 has been realized by the thin film epitaxy. 21 Very few work has been reported about the epitaxial fabrication of thin films with periods larger than 8. Therefore, it would be interesting to explore the growth limit on the period, together with the pressing demand for multiferroic Aurivillius phase thin films with very large period numbers.…”

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confidence: 99%

Self-modulated nanostructures in super-large-period Bi11(Fe5CoTi3)10/9O33 epitaxial thin films

Meng

Zhai

et al. 2015

Applied Physics Letters

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Super-large-period Aurivillius thin films with a pseudo-period of ten were grown on (0 0 1) SrTiO 3 substrates using the pulsed laser deposition method. The as-grown films are found to be coherently strained to the substrate and atomically smooth. X-ray diffraction indicates an average periodicity of ten, while analysis with the high resolution scanning transmission electron microscopy reveals a self-modulated nanostructure in which the periodicity changes as the film thickness increases. Finally, we discuss the magnetic and possible ferroelectric properties of the self-modulated large period Aurivillius films at the room temperature. V C 2015 AIP Publishing LLC.[http://dx.doi.org/10.1063/1.4921966] Double-magnetic-ion doped Aurivillius phase oxides, 1-3 potentially as the single-phase candidate that could exhibit both ferroelectricity (FE) and ferromagnetism (FM) above the room temperature, have recently attracted intensive attentions in the multiferroic community. The general formula of the Aurivillius oxides can be simply as (Bi 2 O 2 ) (A mÀ1 M m O 3mþ1 ), where A ¼ Bi 2þ , Ba 2þ , Ca 2þ , Sr 2þ , etc., and M ¼ Fe 3þ , Co 3þ , Ni 3þ , Ti 4þ , Ta 5þ , Nb 5þ , etc. 4,5 The lattice structure could be regarded as with the pseudo perovskite slabs (A mÀ1 M m O 3mþ1 ) 2À inserted into the fluorite-like bismuth-oxygen bilayers. However, synthesis of such large period structures can be obviously challenging due to the structural instability. Yet understanding such materials would be important for finding new multiferroic material. 6-8 Recently, large period Aurivillius phases have been mostly studied in the bulk ceramic format. 9-12 Unfortunately, bulk ceramic synthesis is usually with the secondary phase generation, 2,13,14 which can become more severe for complex structures with large period number of m. Adopting of single crystalline thin film for the studies would be more favorable, yet a successful growth of such films is very challenging.Hetero-epitaxial growth is privileged in realizing artificial structures that are unstable in their bulk formats, 15 and this may be true for the Aurivillius structures with large periodicity. In non-magnetic Aurivillius Sr mÀ3 Bi 4 Ti m O 3mþ3 (SBTi) system, 16-20 period as large as m ¼ 8 has been realized by the thin film epitaxy. 21 Very few work has been reported about the epitaxial fabrication of thin films with periods larger than 8. Therefore, it would be interesting to explore the growth limit on the period, together with the pressing demand for multiferroic Aurivillius phase thin films with very large period numbers. Among different combinations of double-magnetic ion (Fe-Co, Fe-Mn, Fe-Ni, etc.) doped multiferroic Aurivillius ceramics, Fe-Co doped Bi mþ1 (Fe,Co) mÀ3 Ti 3 O 3mþ3 (BFCTO, m ¼ 4) has been reported with relatively strong FM and FE orders above the room temperature. 3,22 The FM order becomes stronger in larger periods m ¼ 5 and 6 BFCTO systems. [23][24][25][26] It is important to study the fundamental growth mechanism in the epitaxial synthesis of large perio...

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confidence: 99%

Self-modulated nanostructures in super-large-period Bi11(Fe5CoTi3)10/9O33 epitaxial thin films

Meng

Zhai

et al. 2015

Applied Physics Letters

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“…For instance, the deposition of highly textured, oriented and uniform thin films can in principle extensively improve desired physical properties such as ferroelectric polarization, in material systems where the polarization is dependent on crystal orientation. Aurivillius phase materials have been previously fabricated in both bulk and thin film form using molten solid state reaction (MSS), 24 sol-gel 10 and pulse laser deposition (PLD) processes, 25 however, to date no report is available on deposition of n = 5 layer Bi 6 Ti 3 Fe 2 O 15 thin films using liquid injection chemical vapour deposition (LI-CVD). This is a pulsed liquid injection technique in which the volume and injection rate of precursor is controlled electronically in microliter (µL) and pulse per milliseconds (pulse/msec).…”

Section: Introductionmentioning

confidence: 99%

A study of the temperature dependence of the local ferroelectric properties of c-axis oriented Bi6Ti3Fe2O18 Aurivillius phase thin films: Illustrating the potential of a novel lead-free perovskite material for high density memory applications

et al. 2015

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The ability to control the growth, texture and orientation of self-nanostructured lead-free Aurivillius phase thin films can in principle, greatly improve their ferroelectric properties, since in these materials the polarization direction is dependent on crystallite orientation. Here, we report the growth of c-plane oriented Bi6Ti3Fe2O18 (B6TFO) functional oxide Aurivillius phase thin films on c-plane sapphire substrates by liquid injection chemical vapour deposition (LI-CVD). Microstructural analysis reveals that B6TFO thin films annealed at 850°C are highly crystalline, well textured (Lotgering factor of 0.962) and single phase. Typical Aurivillius plate-like morphology with an average film thickness of 110nm and roughness 24nm was observed. The potential of B6TFO for use as a material in lead-free piezoelectric and ferroelectric data storage applications was explored by investigating local electromechanical (piezoelectric) and ferroelectric properties at the nano-scale. Vertical and lateral piezoresponse force microscopy (PFM) reveals stronger in-plane polarization due to the controlled growth of the a-axis oriented grains lying in the plane of the B6TFO films. Switching spectroscopy PFM (SS-PFM) hysteresis loops obtained at higher temperatures (up to 200°C) and at room temperature reveal a clear ferroelectric signature with only minor changes in piezoresponse observed with increasing temperature. Ferroelectric domain patterns were written at 200°C using PFM lithography. Hysteresis loops generated inside the poled regions at room and higher temperatures show a significant increase in piezoresponse due to alignment of the c-axis polarization components under the external electric field. No observable change in written domain patterns was observed after 20hrs of PFM scanning at 200°C, confirming that B6TFO retains polarization over this finite period of time. These studies demonstrate the potential of B6TFO thin films for use in piezoelectric applications at elevated temperatures and for use in non-volatile ferroelectric memory applications.

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“…PLD has previously proven effective at depositing high order Aurivillius and Ruddlesden-Popper structures with large out-of-plane lattice parameters from a single target. [16][17][18] The plasma arriving at the substrate will be homogeneous in composition, so the growth of such lms requires the reorganisation of atoms in the out-ofplane direction on the scale of the unit cells of these materials, which can equal several nanometres. Since the growth rate in PLD is typically on the order of 1 nm per minute, this reorganisation must occur aer condensation of the plasma on the substrate, happening behind the growth front, and driven by an energetically favourable long range order.…”

Section: Introductionmentioning

confidence: 99%

Epitaxial growth and enhanced conductivity of an IT-SOFC cathode based on a complex perovskite superstructure with six distinct cation sites

et al. 2013

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Epitaxial thin films of the 10 layer cubic perovskite superstructure Ba 1.7 Ca 2.4 Y 0.9 Fe 5 O 13 were grown by pulsed laser deposition, retaining the six distinct cation sites found in the bulk material. Growth on single crystal strontium titanate (STO) (0 0 1) substrates changes the observed symmetry from orthorhombic to tetragonal and orients the layer stacking direction of the superstructure normal to the substrate plane. The material is a candidate cathode for solid oxide fuel cells (SOFCs) and in the intermediate temperature (IT) region at 600 C we measure the in-plane AC conductivity of the thin film as 30 S cm À1 , significantly enhanced over 3.5 S cm À1 found for the polycrystalline form. This is assigned to reduction of the grain boundary density and alignment of the planes predicted to have the highest electronic and ionic conductivities. High resolution electron microscopy measurements demonstrate the atomic site ordering producing the superstructure and reveal defects associated with stacking faults in the ordering sequence.

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Synthesis of the superlattice complex oxide Sr5Bi4Ti8O27 and its band gap behavior

Abstract: Structural and electrical properties of c-axis epitaxial homologous Sr m−3 Bi 4 Ti m O 3m+3 (m=3, 4, 5, and 6) thin films

Cited by 9 publications

References 35 publications

Self-modulated nanostructures in super-large-period Bi11(Fe5CoTi3)10/9O33 epitaxial thin films

Self-modulated nanostructures in super-large-period Bi11(Fe5CoTi3)10/9O33 epitaxial thin films

A study of the temperature dependence of the local ferroelectric properties of c-axis oriented Bi6Ti3Fe2O18 Aurivillius phase thin films: Illustrating the potential of a novel lead-free perovskite material for high density memory applications

Epitaxial growth and enhanced conductivity of an IT-SOFC cathode based on a complex perovskite superstructure with six distinct cation sites

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