Organic light-emitting field-effect transistors (OLEFETs) are currently under intensive study owing to their multifunctionality, including current modulation and light emission.[1] This multifunctionality is associated with their potential applicability to display technology. Organic light-emitting diodes (OLEDs) constitute another class of organic lightemitting devices, which require transistors controlling their luminance. In OLEFETs, on the other hand, the luminance can be modulated by changing only gate voltages, without any additional devices. Thus, display panels using OLEFETs have the great advantage of largely reducing both the number of devices and the circuit complexity. The device performance of OLEFETs is based upon the simultaneous carrier injection of both holes and electrons into an organic semiconductor layer, and their subsequent recombination. So far, OLEFETs [2][3][4][5][6][7][8][9][10][11] have been operated by applying direct-current (DC) voltages to the gate contact and between the source and drain electrodes. Within this framework several attempts were made to promote the injection and recombination of the carriers. Examples include the use of heterogeneous metal electrodes [6,8,10,11] and composite organic semiconductors.[3] These attempts, however, made the device structure complicated, and the improvement was yet insufficient. Thus, the difficulty in injecting electrons and holes simultaneously into the organic layer imposed serious restrictions on the structure and steady operation of such devices, and hence hampered the versatility of OLEFETs. This has urged us to renovate the device operation method. In this communication, we propose a novel method of operation for the devices, characterized by the application of alternating-current (AC) voltages to the gate electrode. This prompts the carrier injection from both the drain and source electrodes into an organic layer. Moreover, stable metals such as gold and platinum can be used in those electrodes, to inject both holes and electrons. The organic layer can be constructed in any desired form, e.g., as a thin film or a crystal. As a result, we have been successful in effectively producing strong emissions without altering the device constitution. The devices are operated under AC gate frequencies of 2-20,000 Hz of appropriate gate voltage amplitudes; stronger emissions take place with increasing gate frequencies. Detailed analysis of the electrical data allows us to distinguish two different regimes in the emission processes. This provides a powerful tool in studying the carrier injection and transport mechanisms in organic semiconducting materials. Amongst organic semiconducting materials, thiophene/ phenylene co-oligomers are considered promising because of their unique optoelectronic properties. [5,8,12,13] Hence we have chosen for the present study one of the co-oligomers, 2,5-bis(4-biphenylyl)thiophene (BP1T) [14] (see structural formula in Fig. 1a). The carrier mobility of the BP1T thin-film device is estimated at $10 À3 cm 2 V À1 ...