Synthesis of Ti3SiC2 powder from 1Ti/(1+x)Si/2TiC powder mixtures

Phase reactions associated with the formation of Ti3SiC2 from TiC/Si powders

“…It is commonly referred to as a MAX phase, i.e. a layered, ternary carbide (or nitride) of general chemical formula M n À 1 AX n where M is an early transition metal, A is an element from groups 12-16 in the periodic table of the elements, X is either carbon or nitrogen and n is an integer 1-3. There is consensus in the literature, with some minor variations, on the route of formation of Ti 3 SiC 2 from powder mixtures including Ti metal, such as Ti/SiC/C [7,8], Ti/C/SiC [6,9,10], Ti/Si/C [11,12], Ti/Si/C [13][14][15], Ti/Si/TiC [16,17] or Ti/Si/TiC [18][19][20]. This reaction pathway includes the formation of Ti 5 Si 3 C x as a necessary intermediate phase for the formation of Ti 3 SiC 2 [9,10].…”

Reaction synthesis of Ti3SiC2 phase in plasma sprayed coating

“…A variety of precursor materials viz. Ti-Si-C [4,5,9], Ti-Si-TiC [10,11], Ti-SiC-C [1], Ti-Si-C-SiC [12] and Ti-SiC-TiC [13] have been employed for synthesis of Ti 3 SiC 2 . Of these processing techniques, most of them are perceived to be energy intensive because of both requirement of high temperature (∼1450-1700 • C) and long processing time of approximately 4 h [3,5,6].…”

Effects of TiC addition on formation of Ti3SiC2 by self-propagating high-temperature synthesis

“…Since first introduced by Jeitschko and Nowotny [5] in 1967, Ti 3 SiC 2 has been prepared through a variety of processing techniques, such as chemical vapor deposition (CVD) [6,7], arcmelting [8], reactive hot pressing (HP) and hot isostatic pressing (HIP) [2,9,10], reactive sintering [11][12][13][14][15][16], pulse discharge sintering [17,18], and combustion synthesis in the modes of thermal explosion [19] and self-propagating high-temperature synthesis (SHS) [19][20][21][22][23][24][25]. Moreover, several different combinations of the powder mixtures including Ti/Si/C, Ti/SiC/C, and Ti/Si/TiC have been employed as the reactant materials.…”

“…In most cases, however, the as-synthesized products contain TiC as a second phase [4]. When starting with powder blends of Ti, SiC, and graphite at a stoichiometric composition of 3Ti-SiC-C, Ti 3 SiC 2 bulk samples with high-purity were fabricated by reactive HP at 1600 • C [2] and HIP at 1450-1700 • C [9] for 4 h. In a series of studies performed by Yang and co-workers [11][12][13][14][15], Ti 3 SiC 2 powders were produced by heat treatment of the Ti/Si/TiC powder mixtures with molar ratios of Ti:Si:TiC = 2:2:3 and 1:1:2 at temperatures between 1100 and 1450 • C in a vacuum furnace for about 2 h. Their results indicated formation of an intermediate silicide Ti 5 Si 3 , which further reacted with TiC and Si to form Ti 3 SiC 2 . Moreover, on account of the evaporation of silicon during the heating process, an excessive amount of Si in the reactant blend was shown to effectively enhance the Ti 3 SiC 2 content in the end product [13,14].…”

“…On the other hand, the Ti/Si/TiC powder mixture, in which TiC was used as the source of carbon, was demonstrated to yield high-purity Ti 3 SiC 2 by reactive sintering [11][12][13][14][15], but has not been well characterized by combustion synthesis. In this study, preparation of Ti 3 SiC 2 from TiC-containing powder compacts was attempted using combustion synthesis in the SHS mode.…”