Synthesis of TiO2 thin films using single molecular precursors by MOCVD method for dye-sensitized solar cells application and study on film growth mechanism

Nam, Sang-Hun; Hyun, Jae-Sung; Boo, Jin‐Hyo

doi:10.1016/j.materresbull.2012.04.039

Cited by 22 publications

(5 citation statements)

References 28 publications

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“…In the other word, the films deposited at high temperatures are denser than the films deposited at low temperatures. The same tendency of the growth rate has been reported for other MOCVD systems [9].…”

Section: Resultssupporting

confidence: 85%

“…As the growth temperature increases, the grain size of crystal increases and the width of columnar-shaped of crystal also increases. The increasing of the crystal grain size as the increasing of growth temperature is supposed by the increasing of decomposition rate of the precursor at the substrate surface [9].…”

Section: Resultsmentioning

confidence: 99%

“…Anatase is anisotropic, tetragonal (a = b = 3,785 Å, c = 9,514 Å) with a bandgap of 3.2 eV. Anatase structure can be produced at low temperatures around 350 o C. Rutile is also tetragonal (a = b = 4.593 Å, c = 2.959 Å) with a bandgap of 3.0 eV [4,9]. Rutile structure can be produced at the temperature of 400 o C or higher.…”

Section: Introductionmentioning

confidence: 99%

“…Cobalt-doped TiO 2 deposited on LaAlO 2 and SrTiO 2 substrates have been extensively investigated due to a small lattice mismatch [11]. But, silicon substrates are low cost, available in large diameters, and have well characterized electrical and thermal properties [12] so many reseachers used silicon substrate to deposite TiO 2 or cobalt-doped TiO 2 thin film [1,2,[4][5][6][7][8][9][10][11].…”

Section: Introductionmentioning

confidence: 99%

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Effect of Growth Temperature on Cobalt-Doped TiO<sub>2</sub> Thin Films Deposited on Si (100) Substrate by MOCVD Technique

Saripudin

Saragih

Khairurrijal

et al. 2014

AMR

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Co:TiO2 (cobalt-doped titanium dioxide) thin films have been deposited on the n-type Si (100) substrate at the temperatures range of 325°C 450°C using MOCVD (metal organic chemical vapor deposition) technique. We investigated the effect of growth temperature on the structural and morphological quality of Co:TiO2 thin films. The structure of Co:TiO2 thin films were characterized by XRD while the morphology and the thickness of films were characterized by SEM. The XRD results reveal that all films show the anatase structure and the dominant orientation of anatase phase depends on the growth temperature. The grain size of crystal increases as the growth temperature increases. We also reveal that the growth rate of Co:TiO2 film has a maximum value at the growth temperature of 400°C.

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Section: Resultssupporting

confidence: 85%

Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Effect of Growth Temperature on Cobalt-Doped TiO<sub>2</sub> Thin Films Deposited on Si (100) Substrate by MOCVD Technique

Saripudin

Saragih

Khairurrijal

et al. 2014

AMR

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“…Polycrystalline titania thin films with nanorod morphology have been engineered to match desired microstructures in applications such as antimicrobial coatings, 1,2 template synthesis, 3 and solar cells. [4][5][6] The excellent photoconductive property 7 pertinent to these applications was attributed to the unique dendrite-like morphology with high porosity developed during chemical vapor deposition (CVD). Unlike TiO 2 epitaxial films or particles, these rapidly grown fiber-textured nanorods adopted out-of-equilibrium shapes that are fundamentally different from the usual {101}-terminated morphologies.…”

mentioning

confidence: 99%

Phase field model of faceted anatase TiO2 dendrites in low pressure chemical vapor deposition

Huang

Masters

Krumdieck

et al. 2021

Applied Physics Letters

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Anatase TiO 2 nanorods with a well-defined h110i texture have been studied using a model-based characterization technique based on a previous modeling framework. Intricate secondary side facet characteristics of tilt angles of 26:5 have been indexed, and a h112i growth direction of the well-aligned facets is identified. These results have not been accessed experimentally but crucial in understanding the nature of the most abundant facets and their structural properties. We find agreement between our results and indirect experimental measurements. Highly exposed {116} facets are found to be responsible for excellent electrochemical surface properties in nanostructured anatase TiO 2 thin films.

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CVD Deposited Titania Thin Films for Gas Sensors with Improved Operating Characteristics

Baryshnikova

Filatov

Petrov

et al. 2015

Chemical Vapor Deposition

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This paper describes the results of experimental evaluation of titanium dioxide thin films formed by CVD as active layers in semiconductor, resistive sensors for detection of ethanol vapors. TiO 2 layers with a thickness of 90 nm are formed by CVD in the TTIP-O 2 -O 3 -Ar reaction system. Sensors manufactured with titania films formed under all the deposition conditions studied exhibit good electrical response to the ethanol vapors, with quick response-recovery characteristics in the temperature range 170-300 8C. Sensor performance is determined by the relative amount of anatase phase and grain size in the films. The response value (R air /R ethanol ) of the sample with the highest degree of crystallinity reached 37 at an operating temperature of 200 8C.

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Synthesis of TiO2 thin films using single molecular precursors by MOCVD method for dye-sensitized solar cells application and study on film growth mechanism

Cited by 22 publications

References 28 publications

Effect of Growth Temperature on Cobalt-Doped TiO<sub>2</sub> Thin Films Deposited on Si (100) Substrate by MOCVD Technique

Effect of Growth Temperature on Cobalt-Doped TiO<sub>2</sub> Thin Films Deposited on Si (100) Substrate by MOCVD Technique

Phase field model of faceted anatase TiO2 dendrites in low pressure chemical vapor deposition

CVD Deposited Titania Thin Films for Gas Sensors with Improved Operating Characteristics

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