2013
DOI: 10.1007/s10971-013-3139-x
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Synthesis of two-dimensional gallium nitride via spin coating method: influences of nitridation temperatures

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Cited by 17 publications
(11 citation statements)
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“…Application of solution methods to prepare metal nitride thin films are sparse. 59 Noteworthy, is a report by Luo et al describing the polymer-assisted deposition (PAD) of a series of metal-nitride layers such as TiN, AlN, GaN and NbN. 60,61 In the PAD process, the polymer not only controls the viscosity of the metal-polymer solution but can also bind the metal ions often facilitating a homogenous distribution of the precursor.…”
Section: Thin Film Characterisationmentioning
confidence: 99%
“…Application of solution methods to prepare metal nitride thin films are sparse. 59 Noteworthy, is a report by Luo et al describing the polymer-assisted deposition (PAD) of a series of metal-nitride layers such as TiN, AlN, GaN and NbN. 60,61 In the PAD process, the polymer not only controls the viscosity of the metal-polymer solution but can also bind the metal ions often facilitating a homogenous distribution of the precursor.…”
Section: Thin Film Characterisationmentioning
confidence: 99%
“…The Raman spectrum measured with the Ar ion laser on the GaN thin film was presented in Figure 6. The Raman scattering experiment was carried out in the z(x,unpolarized)ż scattering configuration, where the z and ż are the directions of the incident and scattered light, respectively (Fong et al 2013). Under this configuration, the allowed zone-center phonon modes of wurtzite GaN are E 2 (low), E 2 (high) and A 1 (LO) .…”
Section: Methodsmentioning
confidence: 99%
“…The peak at 567 cm -1 corresponds to the E 2 (high) mode of the hexagonal wurtzite GaN. The stronger peak at 731 cm -1 corresponds to the A 1 (LO) phonon mode of the hexagonal GaN (Fong et al 2013). The allowed Raman phonon mode of E 2 (low), which is located near 140 cm -1 , was not observed because it is very weak in nature and is located outside the Raman system detection range.…”
Section: Methodsmentioning
confidence: 99%
“…Very recently, we have demonstrated the potential, capability and effectiveness of the sol-gel spin coating method in producing the undoped GaN thin films (Fong et al , 2013, 2014a, 2014b, 2015a, 2015b;). While Wang et al (2016) have successfully fabricated rare earth doped GaN thin films using sol-gel spin coating method.…”
Section: Introductionmentioning
confidence: 99%