2009
DOI: 10.1007/s12274-009-9029-4
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Synthesis of vertically oriented GaN nanowires on a LiAlO2 substrate via chemical vapor deposition

Abstract: Vertically oriented nanowires (NWs) of single-crystalline wurtzite GaN have been fabricated on a -LiAlO 2 (100) substrate coated with a Au layer, via a chemical vapor deposition process at 1000 °C using gallium and ammonia as source materials. The GaN NWs grow along the nonpolar [10 ] direction with steeply tapering tips, and have triangular cross-sections with widths of 50 100 nm and lengths of up to several microns. The GaN NWs are formed by a vapor liquid solid growth mechanism and the tapering tips are att… Show more

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Cited by 18 publications
(18 citation statements)
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“…The manipulation of these nanostructures is currently not as trivial as handling bulk materials, although the possibility of aligning an array of nanowires during growth is currently being investigated [6]- [11]. However, the accessible configurations will likely be restricted due to the fact that the angle between the substrate and the nanowires is dependent on the crystallographic growth direction [12], [13].…”
Section: Introductionmentioning
confidence: 99%
“…The manipulation of these nanostructures is currently not as trivial as handling bulk materials, although the possibility of aligning an array of nanowires during growth is currently being investigated [6]- [11]. However, the accessible configurations will likely be restricted due to the fact that the angle between the substrate and the nanowires is dependent on the crystallographic growth direction [12], [13].…”
Section: Introductionmentioning
confidence: 99%
“…The growth of GaN nanowires have been discussed in many previous studies [2,6,7]. The modulation of nanowires, for example, the preparation of a vertical array, creation of a heterostructure, and doping, has also been studied to exploit the potential of nanowires.…”
Section: Introductionmentioning
confidence: 99%
“…[6-10]. Vertically aligned faceted GaN nanorods were produced by Deb et al using a catalyst-free template approach employing a silicon dioxide mask fabricated from the porous anodic alumina [11].…”
Section: Introductionmentioning
confidence: 99%
“…The devices can be also easily fabricated on the nanowire arrays with vertical alignment using the vertical electrical integration scheme, in which the efficiencies of the devices are strongly dependent on the orientation of nanowire crystals in the device [ 5 ]. Therefore, the epitaxial growth of vertically aligned nanowires has attracted a great deal of attention particularly on the growth techniques and the growth mechanism [ 6 ].…”
Section: Introductionmentioning
confidence: 99%