2010
DOI: 10.1134/s0020168510130042
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Synthesis of volatile inorganic hydrides by electrochemical method

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Cited by 7 publications
(5 citation statements)
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“…No guidelines or standards exist for volatile As with the exception of the toxic AsH 3 which is used in the semi-conductor industry 25 and is a by-product of some base metal rening processes. 26 Therefore, an occupational exposure limit has been set aer toxicity tests.…”
Section: The Volatile As Toxicity Issuementioning
confidence: 99%
See 1 more Smart Citation
“…No guidelines or standards exist for volatile As with the exception of the toxic AsH 3 which is used in the semi-conductor industry 25 and is a by-product of some base metal rening processes. 26 Therefore, an occupational exposure limit has been set aer toxicity tests.…”
Section: The Volatile As Toxicity Issuementioning
confidence: 99%
“…Arsine (AsH 3 ) is currently widely used in the industry to form crystals of A III B V semiconductor compounds by way of chemical vapour deposition. 25 AsH 3 reacts with trimethylgallium (TMGa) to form methane (CH 4 ) and gallium arsenide (GaAs), a compound used in the manufacture of microwave integrated circuits as well as infrared and laser diodes. 114,115 Unlike the previous examples, volatile As used in the semiconductor industry is not of biological origin but rather chemically synthesized.…”
Section: Industrially Produced Volatile Asmentioning
confidence: 99%
“…The use of a turbulent flow of white phosphorus emulsion as the catholyte in a vertical electrolyser allows the efficiency of PH 3 electroproduction to be improved, concluding the main role of the surface in the overall electrochemical process 49. The complete details about the electrochemical process of PH 3 and the formation of some other phosphorus hydrides from white phosphorus can be found in a recent review published by authors of the experimental work 50…”
Section: Electrode Reactions Of Elemental (White) Phosphorusmentioning
confidence: 99%
“…Although the generation of Ge hydrides electrochemically has been studied previously, the prevailing sense is this type of hydrogenation is slow and never proceeds with high faradaic efficiency at metal electrodes. 29 The rate of Ge hydride formation at Hg has not been previously reported. A separate possibility is that Ge 0 is produced at the Hg interface but then desorbs (oxidatively) into solution faster than the rate of dissolution into Hg.…”
Section: D504mentioning
confidence: 95%
“…For example, dissolved GeO 2 could get hydrogenated to form a hydride (e.g. GeH 4 ) 29 with transient stability in solution. Such a parallel redox process would naturally lower the faradaic efficiency for crystalline Ge formation.…”
Section: D504mentioning
confidence: 99%