Synthesis of wafer-scale ultrathin graphdiyne for flexible optoelectronic memory with over 256 storage levels

Li, Jiaqiang; Zhang, Zhicheng; Kong, Ya; Yao, Bin-Wei; Yin, Chuancun; Tong, Lianming; Chen, Xudong; Lu, Tong‐Bu; Zhang, Jin

doi:10.1016/j.chempr.2021.01.021

Cited by 47 publications

(57 citation statements)

References 42 publications

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“…Owing to the work‐function difference between MoS 2 and GDY, the multilayer MoS 2 layer is initially depleted of mobile carriers. [ 37 ] The well‐engineered band offset of the GDY/Gr heterojunction, as well as the excellent charge‐trapping capability of GDY [ 31,38–40 ] restrict the injected holes in the GDY layer, resulting in a long retention time.…”

Section: Resultsmentioning

confidence: 99%

“…In addition to V BG pulse, V ds pulses have also been demonstrated to drive the charge tunneling through the blocking layer via Fowler–Nordheim tunneling. [ 12,39 ] However, just as shown in Figure S13 (Supporting Information), a relatively large voltage and long duration are also required for the bias‐voltage mode.…”

Section: Resultsmentioning

confidence: 99%

“…The channel currents after Write‐1 and Erase‐0 operations were measured by applying a drain voltage of 0.1 V at V CG = 0 V. As shown in Figure 4c, a long retention time over 10 4 s has been demonstrated by this memory device, which is comparable to that of the nonvolatile memory devices based on 2D materials (Table S1, Supporting Information). The leakage of the trapped holes in GDY is significantly suppressed, which can be attributed to the excellent charge‐trapping capability of GDY, [ 31,38–40 ] as well as the potential well formed by the GDY/Gr heterojunction and hBN barrier. Here, we would like to clarify that a thick hBN is not essential for the long retention time of the device, especially considering such a thick hBN film is unfriendly to real application.…”

Section: Resultsmentioning

confidence: 99%

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An Ultrafast Nonvolatile Memory with Low Operation Voltage for High‐Speed and Low‐Power Applications

Zhang

et al. 2021

Adv Funct Materials

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Memory plays a vital role in modern information society. High‐speed and low‐power nonvolatile memory is urgently demanded in the era of big data. However, ultrafast nonvolatile memory with nanosecond‐timescale operation speed and long‐term retention is still unavailable. Herein, an ultrafast nonvolatile memory based on van der Waals heterostructure is proposed, where a charge‐trapping material, graphdiyne (GDY), serves as the charge‐trapping layer. With the band‐engineered heterostructure and excellent charge‐trapping capability of GDY, charges are directly injected into the GDY layer and are persistently captured by the trapping sites in GDY, which result in an ultrafast writing speed (8 ns), a low operation voltage (30 mV), and a long retention time (over 104 s). Moreover, a high on/off ratio of 106 is demonstrated by this memory, which enables the achievement of multibit storage with 6 discrete storage levels. This device fills the blank of ultrafast nonvolatile memory technology, which makes it a promising candidate for next‐generation high‐speed and low‐power‐consumption nonvolatile memory.

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

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An Ultrafast Nonvolatile Memory with Low Operation Voltage for High‐Speed and Low‐Power Applications

Zhang

et al. 2021

Adv Funct Materials

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“…As shown in Figure S22, Supporting Information, although the conductance of these devices are distinct due to the irregular shape of the MoS 2 flake, these five devices exhibit linear and symmetric weight update trajectories with relatively small variation of non-linearity (3.1%/4.3% for β P /β D ) and dynamic range (8.7%). Since the synthesis of wafer-scale MoS 2 and GDY films is gradually mature in recent years, [51][52][53] the small DDV makes it possible to construct large-scale device arrays for real applications in the future. Beyond EGTs, memristors and optoelectronic synapses also exhibit unique advantages for neuromorphic applications.…”

Section: (5 Of 12)mentioning

confidence: 99%

Non‐Volatile Electrolyte‐Gated Transistors Based on Graphdiyne/MoS₂ with Robust Stability for Low‐Power Neuromorphic Computing and Logic‐In‐Memory

Yao

Chen

et al. 2021

Adv Funct Materials

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Artificial synapses are the key building blocks for low-power neuromorphic computing that can go beyond the constraints of von Neumann architecture. In comparison with two-terminal memristors and three-terminal transistors with filament-formation and charge-trapping mechanisms, emerging electrolyte-gated transistors (EGTs) have been demonstrated as a promising candidate for neuromorphic applications due to their prominent analog switching performance. Here, a novel graphdiyne (GDY)/MoS 2 -based EGT is proposed, where an ion-storage layer (GDY) is adopted to EGTs for the first time. Benefitting from this Li-ion-storage layer, the GDY/MoS 2 -based EGT features a robust stability (variation < 1% for over 2000 cycles), an ultralow energy consumption (50 aJ µm −2 ), and long retention characteristics (>10 4 s). In addition, a quasi-linear conductance update with low noise (1.3%), an ultrahigh G max /G min ratio (10 3 ), and an ultralow readout conductance (<10 nS) have been demonstrated by this device, enabling the implementation of the neuromorphic computing with near-ideal accuracies. Moreover, the nonvolatile characteristics of the GDY/MoS 2 -based EGT enable it to demonstrate logic-in-memory functions, which can execute logic processing and store logic results in a single device. These results highlight the potential of the GDY/MoS 2 -based EGT for next-generation low-power electronics beyond von Neumann architecture.

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“…In addition to the common doping of nitrogen, boron, chlorine and other elements mentioned above, the introduction of oxygen-containing functional groups into GDY can also be considered as oxygen doping from another perspective, which also has a great regulatory influence on the adsorption capacity and energy storage properties of GDY [63][64][65][66][67][68][69] .…”

Section: Doping Of Non-metallic Elementsmentioning

confidence: 99%

Graphdiyne: from Preparation to Biomedical Applications

Guo

Chen

2021

Chem. Res. Chin. Univ.

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Graphdiyne(GDY) is a kind of two-dimensional carbon nanomaterial with specific configurations of sp and sp 2 carbon atoms. The key progress in the preparation and application of GDY is bringing carbon materials to a brand-new level. Here, the various properties and structures of GDY are introduced, including the existing strategies for the preparation and modification of GDY. In particular, GDY has gradually emerged in the field of life sciences with its unique properties and performance, therefore, the development of biomedical applications of GDY is further summarized. Finally, the challenges of GDY toward future biomedical applications are discussed.

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Synthesis of wafer-scale ultrathin graphdiyne for flexible optoelectronic memory with over 256 storage levels

Cited by 47 publications

References 42 publications

An Ultrafast Nonvolatile Memory with Low Operation Voltage for High‐Speed and Low‐Power Applications

An Ultrafast Nonvolatile Memory with Low Operation Voltage for High‐Speed and Low‐Power Applications

Non‐Volatile Electrolyte‐Gated Transistors Based on Graphdiyne/MoS₂ with Robust Stability for Low‐Power Neuromorphic Computing and Logic‐In‐Memory

Graphdiyne: from Preparation to Biomedical Applications

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Synthesis of wafer-scale ultrathin graphdiyne for flexible optoelectronic memory with over 256 storage levels

Cited by 47 publications

References 42 publications

An Ultrafast Nonvolatile Memory with Low Operation Voltage for High‐Speed and Low‐Power Applications

An Ultrafast Nonvolatile Memory with Low Operation Voltage for High‐Speed and Low‐Power Applications

Non‐Volatile Electrolyte‐Gated Transistors Based on Graphdiyne/MoS2 with Robust Stability for Low‐Power Neuromorphic Computing and Logic‐In‐Memory

Graphdiyne: from Preparation to Biomedical Applications

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Product

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Non‐Volatile Electrolyte‐Gated Transistors Based on Graphdiyne/MoS₂ with Robust Stability for Low‐Power Neuromorphic Computing and Logic‐In‐Memory