Synthesis of Z–scheme Bi2S3/RGO/BiVO4 photocatalysts with superior visible light photocatalytic effectiveness for pollutant degradation

3D MoS2/MgIn2S4 Nanoflower Heterojunctions for Photoreduction of Cr(VI): Mechanism, Influence, and Toxicity Evaluation

“…For In 3d (Figure d), the two peaks at 445.05 and 453.57 eV were attributed to In 3d 5/2 and In 3d 3/2 of In 3+ , respectively. The two S 2p peaks of MS belonged to S 2p 3/2 and S 2p 1/2 , respectively (Figure e), indicating that S in MS was present in the form of S. − MIS and the 3% MS/MIS generally showed similar spectra, except for the peak of Mo. For Mo 3d (Figure f), the XPS peaks of Mo in MS can be divided into three core-level XPS peaks.…”

“…Lastly, the charge transfer process in a Z-scheme heterojunction can result in the loss of charge, leading to a longer path for electrons to be transferred, which can affect the overall efficiency of the device. 20,21 The construction of S-scheme heterojunctions gradually replaced Z-scheme heterojunctions due to the new understanding of carrier transfer and separation of heterojunctions. 22,23 In an S-scheme heterojunction, an internal electric field is created across the junction due to the alignment of the energy bands of two contacting semiconductors, which contribute to the separation and transfer of charge carries.…”

“…These materials can be expensive and may contribute to the overall cost of implementing this technology. Lastly, the charge transfer process in a Z-scheme heterojunction can result in the loss of charge, leading to a longer path for electrons to be transferred, which can affect the overall efficiency of the device. , The construction of S-scheme heterojunctions gradually replaced Z-scheme heterojunctions due to the new understanding of carrier transfer and separation of heterojunctions. , In an S-scheme heterojunction, an internal electric field is created across the junction due to the alignment of the energy bands of two contacting semiconductors, which contribute to the separation and transfer of charge carries . What’s more, the difference in energy band edge positions of two materials results in band bending downward or upward at the interface with respect to other bands, which facilitates electron and hole transfer across the junction. , Based on the above two points, S-scheme heterojunctions substantially improve the interface electron transfer rate compared to Z-scheme heterojunction. , The band bending structure of the S-scheme heterojunction, which provides a favorable energy gradient, effectively retains electrons and holes and enhances recombination of the meaningless photogenerated carriers, obtaining a powerful redox ability and remarkably improving maximum catalytic activity. − …”

Near-Infrared-Driven β-NaYF4:Yb,Tm,Gd/Ni-MOF Nanocomposites for Efficient Sterilization and Degradation of Organic Contaminants

“…The intensity of each emission peak of UNM is found to be much lower than that of UCNRs, owing to the radiative energy transfer (RET) and fluorescence resonance energy transfer (FRET) after Ni-MOF was coated . The lower upconversion fluorescence intensity implies a lower rate of electron–hole recombination, which contributes to the improved photocatalytic properties . As a result, the weakest upconversion fluorescence intensity is observed in the UNM composite, suggesting that the binding of UCNR and Ni-MOF can successfully facilitate the separation of electrons and holes, resulting in favorable photocatalytic properties.…”

“…29 The lower upconversion fluorescence intensity implies a lower rate of electron−hole recombination, which contributes to the improved photocatalytic properties. 30 As a result, the weakest upconversion fluorescence intensity is observed in the UNM composite, suggesting that the binding of UCNR and Ni-MOF can successfully facilitate the separation of electrons and holes, resulting in favorable photocatalytic properties. The band gap of Ni-MOF is estimated by employing the Tauc plot shown in Figure 2b:…”