Synthesis of zirconium silicide in Zr thin film on Si and study of its surface morphology

Theoretical prediction of structural stability, electronic and elastic properties of ZrSi2 under pressure

“…Transition metal silicides have been widely used in medical, aerospace, electronic and many other elds because of their unique properties. [1][2][3][4] TiSi 2 in the C54 structure (face-centered orthorhombic) is not only important in integrated circuit manufacturing by serving as a low resistance contact to metaloxide-semiconductor eld effect transistors such as sub-100 nm gate MOSFET devices [5][6][7][8][9][10][11] because of its fairly low resistivity (13-20 mU cm), but also attracts great attention for applications in very large scale integration (VLSI) technology due to its unique properties such as strong adhesion with silicon substrates, good thermal stability, and high corrosion resistance. Interestingly, TiSi 2 has a metastable phase with a four times higher resistivity.…”