Synthesis of ZnO film on P-GaN/Si(111) by one-step hydrothermal method

Yu, Naisen; Du, Lidong; Du, Haiying; Hu, Danyang; Mao, Zhangwen; Wang, Yong; Wu, Yunfeng; Liu, Dongping

doi:10.1016/j.tsf.2013.10.162

Cited by 14 publications

(6 citation statements)

References 27 publications

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“…A lower HTG temperature, higher solution concentration, and longer growth time lead to a larger diameter of ZnO NWs. ZnO films were formed through the aggregation of NWs and then followed by self-organized growth among interconnected NWs [22]. As shown in Figure 1(b), the sputter-deposited p-Cu 2 O film had a dense NW-like morphology.…”

Section: Resultsmentioning

confidence: 99%

Hydrothermal Growth of Quasi-Monocrystal ZnO Thin Films and Their Application in Ultraviolet Photodetectors

Wang

Lin

et al. 2015

International Journal of Photoenergy

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Quasi-monocrystal ZnO film grown using the hydrothermal growth method is used for the fabrication of Cu2O/ZnO heterojunction (HJ) ultraviolet photodetectors (UV-PDs). The HJ was formed via the sputtering deposition of p-type Cu2O onto hydrothermally grown ZnO film (HTG-ZnO-film). The effect of annealing temperature in the nitrogen ambient on the photoluminescence spectra of the synthesized ZnO film was studied. The optoelectronic properties of Cu2O/ZnO film with various Cu2O thicknesses (250–750 nm) under UV light (365 nm; intensity: 3 mW/cm2) were determined. The UV sensitivity of the HTG-ZnO-film-based UV-PDs and the sputtered ZnO-film-based UV-PDs were 55.6-fold (SHTG) and 8.8-fold (Ssputter), respectively. The significant gain in sensitivity (SHTG/Ssputter= 630%) of the proposed ZnO-film-based device compared to that for the device based on sputtered film can be attributed to the improved photoelectric properties of quasi-monocrystal ZnO film.

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Section: Resultsmentioning

confidence: 99%

Hydrothermal Growth of Quasi-Monocrystal ZnO Thin Films and Their Application in Ultraviolet Photodetectors

Wang

Lin

et al. 2015

International Journal of Photoenergy

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“…Due to the absence of reliable pdoping ZnO, its homojunction diode application has been limited [5]. Some researchers have grown n-ZnO nanostructures on other p-type substrates such as GaN [6][7][8], SiC [9][10][11], GaAs [12,13] and Si [14,15] to provide another way to realize ZnO-based p-n heterojunctions. Light emitting diode based on the n-ZnO/p-GaN heterojunction is one of the best candidates for LEDs because of the ZnO and GaN both have the same wurtzite hexagonal structure and similar lattice parameters that lead to low lattice mismatch (1.8%) [16][17][18].…”

Section: Introductionmentioning

confidence: 99%

Light emitting diode based on n-Zn0.94M0.06O nanorods/p-GaN (M= Cd and Ni) heterojunction under forward and reverse bias

Echresh

Chey

Shoushtari

et al. 2015

Journal of Luminescence

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In this study, we report on the improvement in the optoelectronic properties of n-ZnO nanorods/p-GaN heterojunction. This was achieved by doping the ZnO with cadmium (Cd) and nickel (Ni). The ZnO and Zn0.94M0.06O nanorods grown hydrothermally on the p-GaN substrate were used to fabricate the light emitting diodes (LEDs). Structural measurement revealed that nanorods with wurtzite structure having a preferential orientation along the (002) c-axis. The UV-vis spectra show that the optical band gap of Zn0.94M0.06O nanorods is decreased in comparison to ZnO nanorods. Electrical measurements of the fabricated LEDs show an obvious rectifying behaviour with low threshold voltage. Electroluminescence (EL) characteristics of LEDs operated at forward and reverse bias were investigated. The EL spectra under forward bias show that doping ZnO nanorods with Cd and Ni led to an intensity enhancement of the broad peak in the visible region while the blue peak originating from the p-GaN substrate remains almost unaffected. The effect of doping was to reduce the valence band offsets and consequently more hole injection has occurred leading to the observed enhancement of the broad band in the visible region. Under reverse bias all heterojunction LEDs show the blue light emission peak originating from the p-GaN substrate.

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“…The efficiency of ZnO homojunctions has been limited due to the low carrier concentration, instability and low mobility of the holes in ZnO [7,8]. So, the growth of n-ZnO nanostructures on other p-type semiconductors such as Si [9], GaN [10][11][12], SiC [13][14][15][16] and NiO [17][18][19] can provide alternative way to realize ZnO-based p-n heterojunctions. To the best of our knowledge, few researchers have used p-GaAs as a substrate for ZnO-based LEDs [20,21], and there have been no detailed investigations reported about use of an intermediate layer to improve the optical and electrical properties of n-ZnO nanorods/p-GaAs heterojunction.…”

Section: Introductionmentioning

confidence: 99%

Effect of NiO intermediate layer on the optical and electrical properties of n-ZnO nanorods/p-GaAs heterojunction

et al. 2015

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ZnO nanorods were grown hydrothermally on bare and NiO-coated p-GaAs substrate to fabricate p-n heterojunctions. The NiO intermediate layer was deposited using thermal evaporation technique. The X-ray diffraction patterns revealed that ZnO nanorods grown on the bare p-GaAs do not have any preferential orientation along the c-axis, but those on the NiO-coated p-GaAs have preferential orientation along the c-axis, i.e. along the (002) direction. The scanning electron microscope images show that the NiO intermediate layer improved the uniformity and the alignment of the ZnO nanorods. Photoluminescence spectra demonstrated that increasing the thickness of NiO intermediate layer leads to improve the optical quality of the ZnO nanorods. Current-voltage characteristics showed that the presence of the NiO intermediate layer leads to increase the threshold voltage and decrease the leakage current of the n-ZnO nanorods/p-GaAs heterojunction. The energy band diagram of heterojunctions drown using Anderson model revealed that the NiO intermediate layer acts as an electron-blocking layer in the ZnO side and at the same time increases the hole injection from the GaAs to the ZnO side. Therefore, most of electron-hole pair recombination could occur at the ZnO site.

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Synthesis of ZnO film on P-GaN/Si(111) by one-step hydrothermal method

Cited by 14 publications

References 27 publications

Hydrothermal Growth of Quasi-Monocrystal ZnO Thin Films and Their Application in Ultraviolet Photodetectors

Hydrothermal Growth of Quasi-Monocrystal ZnO Thin Films and Their Application in Ultraviolet Photodetectors

Light emitting diode based on n-Zn0.94M0.06O nanorods/p-GaN (M= Cd and Ni) heterojunction under forward and reverse bias

Effect of NiO intermediate layer on the optical and electrical properties of n-ZnO nanorods/p-GaAs heterojunction

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