Synthesis of ZnO Nanoparticles by Chemical Method and its Structural and Optical Characterization

Ghimire, Rakesh; Parajuli, Ashutosh; Gupta, Suresh; Bahadur, Krishna

doi:10.3126/bibechana.v19i1-2.46396

Cited by 7 publications

(4 citation statements)

References 17 publications

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“…This indicates that the polycrystalline nature of the film. Here it is observed that there are three main peaks in the X-ray diffraction pattern which are (100), (002) and (101) which indicate that the film are polycrystalline and randomly orientated [10,15]. The polycrystallinity is expected due to the lack of epitaxial relationship between ZnO and the glass substrate.…”

Section: Resultsmentioning

confidence: 84%

“…One of the big challenges in present transistor technology is to increase the maximum attainable carrier density for high performance of the device. The chemical doping to increase the charge carrier is not suitable due to its unnecessary complexity in the physical properties of the material [9,10]. Conventional metal dielec-tric gates have relatively low dielectric constants and have the limitation of charge density accumulation [11].…”

Section: Introductionmentioning

confidence: 99%

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Fabrication of transparent polycrystalline zinc oxide thin film UV sensing transistor using polymeric electrolyte gate dielectric

2023

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The fabrication of electric double layer thin film transistors (EDLTFTs) using polymeric electrolyte as gate dielectric on chemically grown polycrystalline ZnO thin film channel has the lower threshold voltage at 0.4 V and the saturation current at 3 µA in the dark. The lower threshold voltage is -1 V and the saturation current is 10 µA in the UV illumination. In the dark and under UV light, the off state ID is 1 nA and 0.3 µA respectively and under gate and UV illumination the on current shows more than 3 times enhancement. This improvement in photocurrent is due to the combined effect of gate and UV illumination. The field effect mobility of the TFT is 0.06 cm2/Vs in the dark and 0.16 cm2/Vs under UV illumination. This increase in mobility under illumination and gate bias is due to the increase in carrier concentration and reduction of charged defects in the channel length.

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Section: Resultsmentioning

confidence: 84%

Section: Introductionmentioning

confidence: 99%

Fabrication of transparent polycrystalline zinc oxide thin film UV sensing transistor using polymeric electrolyte gate dielectric

2023

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“…Materials having very close band gap can show the homojunction at the interface [8]. Zinc oxide (ZnO) has been widely investigated as a promising material for light emitting devices, UV photo detectors, chemical and biological sensor [9][10][11][12]. The lack of p-type electrical conductivity in ZnO emphasizes the importance of the study of hybrid heterojunctions [13][14][15].…”

Section: Introductionmentioning

confidence: 99%

Optical and Electrical Properties of Homo and Heterojunction Formed by the ZnO/FTO and CuO/ZnO/FTO Nanostructures

Ghimire,

Pokhrel,

Gupta

et al. 2023

J. Nep. Phys. Soc.

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The most common materials used to create electrical and optoelectronic devices for a variety of applications including transistor, sensor and detector are semiconductor nanostructures. Combining the nanostructures can result semiconductor homostructure and heterostructure. The homojunction of ZnO/FTO and heterojunction of CuO/ZnO/FTO coated glass substrate are formed using spray pyrolysis technique. The optical band gap for the FTO, ZnO, ZnO/FTO and CuO/ZnO/FTO films calculated using data from UV-visible spectroscopy are 3.629 eV, 3.236 eV, 3.113 eV and 1.456 eV respectively. The observed ohmic behavior of ZnO/FTO homojunction is due to the close band gap of FTO (i.e. Eg = 3.629 eV) and ZnO (Eg = 3.236 eV) whereas the non-ohmic behavior of CuO/ZnO/FTO heterojunction is due to the significant different in band gap energy of CuO (i.e. Eg = 1.456 eV) and ZnO (Eg = 3.236 eV). The photocurrent for ZnO/FTO homojunction increases from 232 μA to 350 μA for visible light illumination and from 232 μA to 400 μA for UV light illumination at bias voltage of 2.5 V. There is no significantly changed in the threshold voltage in visible region. For the CuO/ZnO/FTO heterojunction, the photocurrent increases from 280 μA to 390 μA for visible illumination and from 280 μA to 480 μA for UV illumination at 2.5 V. The enhancement of channel current in both sample (i.e. homojunction and heterojunction) under visible illumination is due to detrapping the charge carriers from mid gap states and released to the conduction band. The large enhancement of photocurrent under UV illumination is due to band gap absorption. Threshold voltage for CuO/ZnO/FTO non-ohmic device is shifted negatively from 1 V to 0 V with increasing the frequency of incident radiation. It suggests that the heterojunction formed by CuO/ZnO/FTO structure is applicable for broad band photo detector.

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“…Subsequently, the spherical nanoparticle (NP) of the desired radius is selected by applying the same statistical procedure. A nanometer-sized particle ranges in size from 1 nm to 100 nm [7,8]. NP serves as distinct units for investigating their physical properties and transport behavior.…”

Section: Introductionmentioning

confidence: 99%

Simulating and Analyzing the Electronic Structure of a Spherical Amorphous SiO2 Nanoparticle of Finite Radius

Dhakal,

Rai

2023

J. Nep. Phys. Soc.

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This study focuses on the electronic structure and properties of amorphous SiO2 nanoparticle with a radius of 18 Å using Density Functional Theory and the Orthogonalized Linear Combination of Atomic Orbital method. Through employing appropriate statistical techniques, three distinct models (I, II, and III) of amorphous SiO2 nanoparticle with an 18 Å radius are generated based on the continuous random network structure incorporating periodic boundaries. The calculated Total Density of States and Partial Density of States reveal insights into the electronic interactions within the nanoparticle. The band gap values are assessed at both less accurate and more accurate potentials such that the band gap increases from 2 eV to 4.2 eV with higher potentials for Model I, where surface atoms has dangling bonds stabilized by hydrogen atoms. Model II, consisting of all surface silicon atoms bonded to four oxygen atoms, exhibits a band gap of 1 eV, increasing to 1.8 eV with higher potentials. Model III, saturated with hydrogen atoms, shows a band gap of 4 eV, decreasing to 3.75 eV at higher potentials. The introduction of the more accurate potential serves to minimize the gap states initially observed with the less accurate potential. The electronic structure calculations provide crucial information for understanding the electronic interactions within the amorphous SiO2 nanoparticle with implications for their applications in various fields such as biomedicine, catalysis, electronics, and nanotechnology.

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Synthesis of ZnO Nanoparticles by Chemical Method and its Structural and Optical Characterization

Cited by 7 publications

References 17 publications

Fabrication of transparent polycrystalline zinc oxide thin film UV sensing transistor using polymeric electrolyte gate dielectric

Fabrication of transparent polycrystalline zinc oxide thin film UV sensing transistor using polymeric electrolyte gate dielectric

Optical and Electrical Properties of Homo and Heterojunction Formed by the ZnO/FTO and CuO/ZnO/FTO Nanostructures

Simulating and Analyzing the Electronic Structure of a Spherical Amorphous SiO2 Nanoparticle of Finite Radius

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