Synthesis, optical, and magnetic properties of diluted magnetic semiconductor Zn1−xMnxO nanowires via vapor phase growth

Chang, Ye-Di; Wang, D. B.; Luo, Xiaoguang; Xu, Xiangyu; Chen, X. H.; Li, L.; Chen, C. P.; Wang, R. M.; Xu, Jianjun; Yu, Dakuan

doi:10.1063/1.1625788

Cited by 219 publications

(98 citation statements)

References 19 publications

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“…Controlled doping of ZnO nanowires has indeed led to diverse applications in recent years such as photodetectors [8], p-n homojunction rectifiers [9], sensors [10], light-emitting diodes [11], piezoelectric generators [12], field-effect transistors [13], and field emitters [14]. Likewise, doping ZnO nanowires with transition metals [15][16][17] or rare-earth elements [18,19] makes them candidate building blocks in bottom-up assembly of spintronic devices. To add to the foregoing cases, we will show that the functional properties of ZnO nanowires could further be diversified by doping with Bi, making them candidate materials for spinorbitronic [20] applications.…”

Section: Introductionmentioning

confidence: 99%

Doping-induced spin-orbit splitting in Bi-doped ZnO nanowires

2017

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Published version available at https: // doi. org/ 10. 1103/ PhysRevB. 95. 155404Our predictions, based on density-functional calculations, reveal that surface doping of ZnO nanowires with Bi leads to a linear-in-k splitting of the conduction-band states, through spin-orbit interaction, due to the lowering of the symmetry in the presence of the dopant. This finding implies that spin-polarization of the conduction electrons in Bi-doped ZnO nanowires could be controlled with applied electric (as opposed to magnetic) fields, making them candidate materials for spinorbitronic applications. Our findings also show that the degree of spin splitting could be tuned by adjusting the dopant concentration. Defect calculations and ab initio molecular dynamics simulations indicate that stable doping configurations exhibiting the foregoing linear-in-k splitting could be realized under reasonable thermodynamic conditions.

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Section: Introductionmentioning

confidence: 99%

Doping-induced spin-orbit splitting in Bi-doped ZnO nanowires

2017

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“…Therefore, un- [20,22]. Mn 3 O 4 is ferromagnetic ordering, and its Curie temperature is around 44 K [23]. It is already reported that the curie temperature of ZnMnO and ZnMn 2 O 3 like phase are well above 300 K [20,24,25].…”

Section: M-h Curvementioning

confidence: 96%

Ferromagnetic Domain Behaviors in Mn doped ZnO Film

Soundararajan¹,

Santoyo-Salazar²,

Ko³

et al. 2011

Journal of Magnetics

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Mn doped ZnO films were prepared on Si (100) substrates using sol-gel method. The prepared films were annealed at 550ºC for decomposition and oxidation of the precursors. XRD analysis revealed the presence of ZnMnO hexagonal wurtzite phase along with the presence of small quantity of ZnMn 2 O 3 secondary phase and poor crystalline nature. The 2D, 3D views of magnetic domains and domain profiles were obtained using magnetic force microscopy at room temperature. Rectangular shaped domains with an average size of 4.16 nm were observed. Magnetic moment measurement as a function of magnetic field was measured using superconducting quantum interference device (SQUID) magnetometry at room temperature. The result showed the ferromagnetic hysteresis loop with a curie temperature higher than 300 K.

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“…The above results are supported by modeling results (Wang and Qian, 2006) although carrier mediated exchange has not yet to be experimentally verified in nanowires. Similarly, high Curie temperatures have been observed in other transition metal doped semiconductor nanostructures such as II-VI (including ZnO (Chang et al, 2003, Cui and Gibson, 2005, Baik and Lee, 2005, ZnS (Brieler et al, 2004, Radovanovic et al, 2005, CdS (Radovanovic et al, 2005)) and III-V (including GaN (Radovanovic et al, 2005, Choi et al, 2005b, GaAs (Jeon et al, 2004)), but only inconclusive reports have been published on the magneto-electric transport in these nanostructures. It could be attributed to the complicated ferromagnetic properties caused by precipitates, second-phase alloys and nanometer-scale clusters.…”

Section: Introductionmentioning

confidence: 99%