2020
DOI: 10.1039/c9cs00848a
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Synthesis, optoelectronic properties and applications of halide perovskites

Abstract: Halide perovskites have emerged as a class of most promising and cost-effective semiconductor materials for next generation photoluminescent, electroluminescent and photovoltaic devices.

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Cited by 364 publications
(252 citation statements)
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“…[17][18][19] Their success can be attributed to strong absorption of ionizing radiation due to presence of heavy atoms (Pb, I, and Br), high charge carrier mobilities, long exciton diffusion, long charge carrier lifetime, and excellent optical properties. [20][21][22][23][24] Single crystal [19,[25][26][27][28][29][30][31] and thick film [32][33][34][35][36] perovskite X-ray detectors have been the focal point of current research, often incorporated in a lateral photoconductor radiation detector architecture. This kind of devices show an outstanding sensitivity as well as fast, stable, and reproducible response.…”
Section: Introductionmentioning
confidence: 99%
“…[17][18][19] Their success can be attributed to strong absorption of ionizing radiation due to presence of heavy atoms (Pb, I, and Br), high charge carrier mobilities, long exciton diffusion, long charge carrier lifetime, and excellent optical properties. [20][21][22][23][24] Single crystal [19,[25][26][27][28][29][30][31] and thick film [32][33][34][35][36] perovskite X-ray detectors have been the focal point of current research, often incorporated in a lateral photoconductor radiation detector architecture. This kind of devices show an outstanding sensitivity as well as fast, stable, and reproducible response.…”
Section: Introductionmentioning
confidence: 99%
“… 8 12 Now, fabricating perovskite SCTFs in controllable manners is the main challenge for the future commercialization of high-performance optoelectronic devices. 13 …”
Section: Introductionmentioning
confidence: 99%
“…The energy lost by the photon is gained by the scattering electron, which is excited to a higher energy state. The linear absorption coefficient ( C ) for Compton scattering is given by [42,43] C ≈ ∕(E) 1∕2 (8) The process leads to the generation of lower energy exciton (loosely bound hole-electron pair) that is transported to defect states, or activators, within the scintillating material that ultimately recombines and generate visible photons. The emitted light can then be detected using different types of photodetectors such as Si photodiodes, thin-film phototransistors (photo-TFTs), photomultiplier tubes (PMTs), complementary metaloxide-semiconductor (CMOS) photodetectors, silicon avalanche photodiodes, or charge-coupled devices (CCDs) coupled with the scintillator element.…”
Section: Indirect X-ray Detectionmentioning
confidence: 99%