2022
DOI: 10.1016/j.ceramint.2021.12.208
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Synthesis, properties, and multifarious applications of SiC nanoparticles: A review

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Cited by 53 publications
(21 citation statements)
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“…In 1947, Ramsdell systematically identified different types of silicon carbide. The type of SiC was marked as nX, where "X" represents the Bravais lattice, including cubic (C), hexagonal (H), and rhombic (R), and "n" indicates the number of diatomic layers contained in one lattice period [10]. That is, the number indicates the periodicity, and the letter indicates the resulting structure.…”
Section: Crystal Structure Of Silicon Carbidementioning
confidence: 99%
See 1 more Smart Citation
“…In 1947, Ramsdell systematically identified different types of silicon carbide. The type of SiC was marked as nX, where "X" represents the Bravais lattice, including cubic (C), hexagonal (H), and rhombic (R), and "n" indicates the number of diatomic layers contained in one lattice period [10]. That is, the number indicates the periodicity, and the letter indicates the resulting structure.…”
Section: Crystal Structure Of Silicon Carbidementioning
confidence: 99%
“…2) [9]. There are about 250 polytypes, some of which have a stacking period of several hundred double layers [10].…”
Section: Crystal Structure Of Silicon Carbidementioning
confidence: 99%
“…Experimental results infer that the EMW absorption is often related to electromagnetic properties/microstructure of the material, the thickness of the absorber, and the processing factors like the different assemblages of the multilayers, etc. [9]. In the material domain, improving the EMW absorption by the combination of fillers with different EM constitutive parameters (dielectric permittivity, conductivity, and magnetic permeability) and optimizing their microstructures are always the main research directions [10,11].…”
Section: Introductionmentioning
confidence: 99%
“…By simply scanning a pristine polymer, composite structures composed of carbon-based NCs can be directly patterned, allowing for the rapid fabrication of flexible devices. Previously, it has been indicated that if the irradiated polymer is a silicone polymer, namely, polydimethylsiloxane (PDMS), the resulting composite structure can also contain silicon carbide NCs (SiC-NCs). Bulk SiC is a well-known semiconductor already implemented in a variety of commercially available electronic and photonic devices. In recent years, SiC-NCs have slowly been gaining attention as an up-and-coming material with the potential to outperform previously existing NCs. , Although the number of studies regarding SiC-NCs is still relatively less compared to that of other NCs, the presently reported results are highly promising and indicate the advantages of using SiC-NCs for semiconducting electronic units, solar cells, and fluorescence-based sensors . However, for the structures patterned by the laser-induced modification of silicone polymers, material properties distinctive of SiC-NCs have not been reported, possibly due to the low SiC-NC content.…”
Section: Introductionmentioning
confidence: 99%
“…In recent years, SiC-NCs have slowly been gaining attention as an up-and-coming material with the potential to outperform previously existing NCs. 19,20 Although the number of studies regarding SiC-NCs is still relatively less compared to that of other NCs, the presently reported results are highly promising and indicate the advantages of using SiC-NCs for semiconducting electronic units, 21 solar cells, 22 and fluorescence-based sensors. 23 However, for the structures patterned by the laser-induced modification of silicone polymers, material properties distinctive of SiC-NCs have not been reported, possibly due to the low SiC-NC content.…”
Section: ■ Introductionmentioning
confidence: 99%