This study presents a comprehensive investigation of
the optical
and structural characteristics of the indium selenide (InSe) film
prepared on a glass substrate. The structural characteristics of the
InSe film were analyzed using characterization techniques including
X-ray diffraction, scanning electron microscopy, and energy-dispersive
X-ray spectroscopy while the UV–vis spectrophotometry method
was used in the spectral range between 500 and 1000 nm to examine
the optical characteristics. Thus, the UV–vis spectroscopic
data were used to extract several optical parameters including extinction
coefficient (k), optical band gap (E
g), refractive index (n), absorption
coefficient (α), and optical conductivity (σopt). The optical transition of InSe was found as a direct transition.
However, the optical analysis of this study has revealed that the
InSe film has the potential to be used in various optoelectronic and
photovoltaic applications.