Synthesis, Structure and Thermal Properties of Volatile Indium and Gallium Triazenides**

Abstract

Indium and gallium nitride are important semi‐conductor materials with desirable properties for high‐frequency and power electronics. We have previously demonstrated high‐quality ALD grown InN and GaN using the hexacoordinated 1,3‐diisopropyltriazenide In(III) and Ga(III) precursors. Herein we report the structural and thermal properties their analogues employing combinations of isopropyl, sec‐butyl and tert‐butyltriazenide alkyl groups on the exocyclic nitrogen of the triazenide ligand. The new triazenide compounds were all found to be volatile (80‐120 °C, 0.5 mbar) and showed very good thermal stability (200 and 300 °C). These new triazenide analogues provide a set of precursors whose thermal properties are determined and can be accordingly tailored by strategic choice of exocyclic nitrogen alkyl substituents.

Synthesis, characterisation and reactivity of a zinc triazenide for potential use in vapour deposition

“…Using the Stokes-Einstein equation yielded a diameter of 8.5 Å, which is much smaller than that along the major axis of dimeric 1 obtained from the crystal structure (~13.8 Å). For comparison, DOSY for tris(1,3-di-tert-butyltriazenide)indium (III) 25 (In(tBu 2 N 3 ) 3 ) yielded D = 7.42 × 10 −10 m 2 s −1 , which gave a Stokes-Einstein diameter of 9.7 Å. This diameter matched that from the crystal structure (~10 Å).…”

“…Recently, we reported a range of volatile 1,3-dialkyltriazenide compounds for group 11, 13, and 14 metals. [21][22][23][24][25][26] The Ga and In triazenides have been used as ALD precursors to afford excellent quality thin films of GaN, InN, InGaN, and In 2 O 3 . 21,22,[27][28][29] The group 11 triazenides have great promise as single-source precursors, whilst the group 14 triazenides have desirable thermal and volatility properties.…”

Synthesis, Structure, and Thermal Properties of Volatile Group 11 Triazenides as Potential Precursors for Vapor Deposition

“…Recently, we reported the first examples of volatile group 13 and 14 dialkyltriazenides. − The Ga and In triazenides have been used as ALD precursors to afford excellent-quality GaN, InN, InGaN, and In 2 O 3 . ,,− With the success of the triazenide ligand to produce volatile and thermally stable group 13 and 14 compounds, we decided to investigate its reactivity with monovalent coinage metals. Herein, we report the synthesis, structure, and thermal properties of monovalent group 11 triazenides.…”