A Dy3+-doped PbGa2S4 crystal with
low phonon energy has been proved to be able to achieve the direct
lasing of a mid-infrared laser. The single-crystal growth of Dy3+:PbGa2S4 was investigated in this work.
On the basic of the high-purity polycrystalline material synthesized
using a pressure-assisted method, a Dy3+:PbGa2S4 single crystal with φ 21 × 50 mm3 was successfully grown using the Bridgman method with a crucible–capsule
technique. To understand the cleavage character of the PbGa2S4 crystal and get further insight into its electronic
and phonon properties, the electronic, phonon, and mechanical properties
of the PbGa2S4 host were investigated using
first-principles calculations. PbGa2S4 exhibits
not only a large electronic energy gap (2.76 eV) but also a low phonon
energy (392 cm–1) due to the incorporation of heavy
Pb atoms between the interlayers. The high-frequency phonon bands
of PbGa2S4 are mainly contributed by the vibrations
of Ga–S atoms in the layer network formed by GaS4 units. However, the weak Pb–S bonding connecting the alternating
layers results in cleavage behavior of the PbGa2S4 crystal. We believe that the results of this paper could provide
useful references for preparing or designing new chalcogenide hosts
for mid-infrared lasers.