Synthesis, Transfer, and Devices of Single- and Few-Layer Graphene by Chemical Vapor Deposition

Arco, Lewis Gomez De; Zhang, Yi; Kumar, Akshay; Zhou, Chongwu

doi:10.1109/tnano.2009.2013620

Cited by 256 publications

(191 citation statements)

References 17 publications

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“…Because the various physicochemical properties of graphene are sensitive to its thickness [3][4][5] , the capability of synthesizing uniform graphene with well-controlled layer numbers has been one of the major challenges in graphene research 6 . Chemical vapour deposition (CVD) has been actively investigated since 2009 for growing graphene on catalytic metal films or foils from gaseous carbon sources at high temperatures [7][8][9][10] . The first CVD graphene was obtained on polycrystalline nickel (Ni) film, which has a small lattice mismatch with graphene 7 .…”

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confidence: 99%

Rational design of a binary metal alloy for chemical vapour deposition growth of uniform single-layer graphene

et al. 2011

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Controlled growth of high-quality graphene is still the bottleneck of practical applications. The widely used chemical vapour deposition process generally suffers from an uncontrollable carbon precipitation effect that leads to inhomogeneous growth and strong correlation to the growth conditions. Here we report the rational design of a binary metal alloy that effectively suppresses the carbon precipitation process and activates a self-limited growth mechanism for homogeneous monolayer graphene. As demonstrated by an ni-mo alloy, the designed binary alloy contains an active catalyst component for carbon source decomposition and graphene growth and a black hole counterpart for trapping the dissolved carbons and forming stable metal carbides. This type of process engineering has been used to grow strictly singlelayer graphene with 100% surface coverage and excellent tolerance to variations in growth conditions. With simplicity, scalability and a very large growth window, the presented approach may facilitate graphene research and industrial applications.

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Rational design of a binary metal alloy for chemical vapour deposition growth of uniform single-layer graphene

et al. 2011

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“…Recently, chemical vapor deposition ͑CVD͒ has been demonstrated as an attractive method to synthesize graphene. [10][11][12][13] The precise control over the number of graphene layers is, however, difficult due to its sensitivity to various process parameters. In this regard, CVD scheme on Cu films has been shown to result in controlled synthesis of single-layer graphene.…”

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confidence: 99%

“…15 From the Raman spectrum, a ratio of D to G peaks, I D / I G ϳ 0.09 with the 2D full width half maximum of ϳ51 cm −1 are observed, indicating a multilayer graphene sheet with relatively low defect density, similar to the previously reported graphene sheets grown by CVD on Ni substrates. [10][11][12][13] The process mechanism is similar to that of the metalinduced crystallization of inorganic semiconductors which has been widely explored in the past. 16,17 Briefly, in our case, carbon atoms diffuse into the metal layer at elevated temperatures followed by their precipitation as graphene on the free surface during the cool-down step as the solid solubility limit is reached.…”

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Metal-catalyzed crystallization of amorphous carbon to graphene

Zheng

Takei

Hsia

et al. 2010

Applied Physics Letters

254

195

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Metal-catalyzed crystallization of amorphous carbon to graphene by thermal annealing is demonstrated. In this “limited source” process scheme, the thickness of the precipitated graphene is directly controlled by the thickness of the initial amorphous carbon layer. This is in contrast to chemical vapor deposition processes, where the carbon source is virtually unlimited and controlling the number of graphene layers depends on the tight control over a number of deposition parameters. Based on the Raman analysis, the quality of graphene is comparable to other synthesis methods found in the literature, such as chemical vapor deposition. The ability to synthesize graphene sheets with tunable thickness over large areas presents an important progress toward their eventual integration for various technological applications.

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“…1, parameters of the prepared graphene films of measured I2D/IG and I D /I G ratios are shown in dependence on the conditions of their preparation, mainly on the thickness of the Co layer. The table is completed with a column showing the estimated number of carbon monolayers within the graphene film [3]. The best graphene films exhibit the quality of bi-layer graphene (BLG).…”

Section: Resultsmentioning

confidence: 99%

“…One of the frequently used methods for graphene preparation is CVD (chemical vapour deposition), [3]. The said method is used for preparation of graphene layers onto thin metallic foils, mainly on copper.…”

Section: Introductionmentioning

confidence: 99%

Graphene growth by transfer-free chemical vapour deposition on a cobalt layer

Macháč

Hejna

Slepička

2017

Journal of Electrical Engineering

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The contribution deals with the preparation of graphene films by a transfer-free chemical vapour deposition process utilizing a thin cobalt layer. This method allows growing graphene directly on a dielectric substrate. The process was carried out in a cold-wall reactor with methane as carbon precursor. We managed to prepare bilayer graphene. The best results were obtained for a structure with a cobalt layer with a thickness of 50 nm. The quality of prepared graphene films and of the number of graphene layers were estimated using Raman spectroscopy. with a minimal dots diameter of 180 nm and spacing of 1000 nm were successfully developed.

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Synthesis, Transfer, and Devices of Single- and Few-Layer Graphene by Chemical Vapor Deposition

Cited by 256 publications

References 17 publications

Rational design of a binary metal alloy for chemical vapour deposition growth of uniform single-layer graphene

Rational design of a binary metal alloy for chemical vapour deposition growth of uniform single-layer graphene

Metal-catalyzed crystallization of amorphous carbon to graphene

Graphene growth by transfer-free chemical vapour deposition on a cobalt layer

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