“…Indeed, this simple picture explains to a great extent the origin of metal-insulator transitions observed in many of these compounds. [19][20][21][22][23][24][25]38,45,46 In a classical Mott insulator, given the width of the Hubbard bands, decreasing the separation (d) between adjacent V 4+ sites eventually increases orbital overlap W to the extent that an abrupt transition to a metallic state can be triggered. Equivalently, if a high density of charge carriers is introduced within a Mott insulator as a result of optical, thermal, doping, or gate-voltage-induced excitations, Thomas-Fermi screening of bound excitonic states by the free carriers causes a breakdown of attractive electrostatic interactions between electrons and holes and leads to an abrupt increase of the carrier density, resulting in transformation of the system to a metallic state.…”