1995
DOI: 10.1149/1.2050078
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Synthetic Diamond Electrodes: Photoelectrochemical Investigation of Undoped and Boron‐Doped Polycrystalline Thin Films

Abstract: The photoelectrochemical behavior of polycrystalline diamond films, grown on tungsten substrates by chemical vapor deposition (CVD), has been studied in 0.5M H2SO~ solution. Different types of films have been investigated, with or without intentional doping with boron. Experimental results point to a p-type behavior of boron-doped samples, while the presence of an inversion of the photocurrent sign reveals an insulating behavior of undoped samples. Photocurrent spectra display different threshold energies, whi… Show more

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Cited by 48 publications
(21 citation statements)
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“…12 In this work, we explore the potential for the use of oxygen-terminated, nitrogen-doped ultrananocrystalline diamond (N-UNCD) as an optically driven stimulation electrode. Although there have been a number of reports looking at the photoelectrochemical response of diamond 12,13 and related materials, 14,15 the role of surface termination has not been addressed in sufficient detail. Furthermore, most of these works have focused on the steady-state photoresponse and have not fully explored the effect of mixed phase materials such as N-UNCD.…”
mentioning
confidence: 99%
“…12 In this work, we explore the potential for the use of oxygen-terminated, nitrogen-doped ultrananocrystalline diamond (N-UNCD) as an optically driven stimulation electrode. Although there have been a number of reports looking at the photoelectrochemical response of diamond 12,13 and related materials, 14,15 the role of surface termination has not been addressed in sufficient detail. Furthermore, most of these works have focused on the steady-state photoresponse and have not fully explored the effect of mixed phase materials such as N-UNCD.…”
mentioning
confidence: 99%
“…For carrier density calculations, the dielectric constant of 5.7 (same as single–crystal diamond) was used. All the Mott-Schottky plots exhibited a distinct negative slope indicative of p-type carrier conduction [ 63 , 64 , 65 , 66 , 67 , 68 , 69 ]. Since such data for nanodiamond overlayers immobilized on BDD have not yet been reported, the values and the trend in comparison to other carbon-based materials are challenging.…”
Section: Resultsmentioning
confidence: 99%
“…The shifts in E f indicate that the ND surfaces play a vital role which strongly affects the interfacial electron energetics while ensuring electrostatic stabilization of the colloidal dispersions produced by the SAUD process. Knowing that the flatband potential of a p-type semiconductor is located near the vicinity of a valence band [ 66 , 67 , 68 , 69 ], it is suggestive that the whole band offset, namely, the location of conduction and valence bands could be modified [ 66 ]. The estimated N values are higher compared to the ones reported for typical boron doped diamond [ 66 , 67 ] and could result mainly from surface chemical composition and the core-shell carbon phases (sp 2 C/sp 3 C ratio).…”
Section: Resultsmentioning
confidence: 99%
“…[92][93][94][95][96]. Boron is easily incorporated in the diamond film, substituting carbon atoms in the lattice.…”
Section: Boron-doped Diamond Electrodesmentioning
confidence: 99%
“…BDD electrodes are thus semiconductor electrodes with microcrystalline structure and relatively rough surfaces on the micrometric scale, with exceptional chemical inertness and mechanical strength, negligible adsorption of organic compounds, extreme hardness and applications in aggressive media such as strong acids. BDD is an excellent electrode material with a very wide potential range in aqueous solution and low background current, due to the absence of carbon-oxygen functionalities and low sensitivity to dissolved oxygen, [92][93][94][95][96][97][98][99][100][101][102][103][104].…”
Section: Boron-doped Diamond Electrodesmentioning
confidence: 99%