Synthetic nonlinear semiconductors

Gurnick, M.; DeTemple, T. A.

doi:10.1109/jqe.1983.1071927

Cited by 223 publications

(75 citation statements)

References 26 publications

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“…When the emission wavelength of the OW was tuned to the resonant wavelength of the cavity: Xr due to QGCSE, the PL intensity detected along the normal direction to the cavity surface was strongly enhanced to be about 40 fold as high as that of the WMC-device. This clearly indicates that the coupling efficiency (13) of the spontaneous emission into the resonant mode of the cavity can be easily and dynamically controlled by applied voltages (electric fields). A particular interest lies in controllable beam steering of the spontaneous emission through the tuning of emission wavelength caused by QCSE.…”

Section: VIIImentioning

confidence: 90%

Quantum Optoelectronics Technical Digest, 1993. Volume 8. Postconference Edition. Summaries of Papers Presented at the Quantum Optoelectronics Topical Meeting Held in Palm Springs, California on March 17-19, 1993.

WASHINGTON¹

1993

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Section: VIIImentioning

confidence: 90%

Quantum Optoelectronics Technical Digest, 1993. Volume 8. Postconference Edition. Summaries of Papers Presented at the Quantum Optoelectronics Topical Meeting Held in Palm Springs, California on March 17-19, 1993.

WASHINGTON¹

1993

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“…Of particular technological interest is the lowwavelength spectral range below 5 mm, in which no clearly advantageous semiconductor laser technology has yet been identified. Nonlinear QCLs use the giant nonlinear properties of resonant intersubband transitions [3,21]. These properties have been studied intensively over the past 20 years, but practical applications of them have been limited by the lack of compact, powerful pump sources and versatile phase-matching techniques.…”

Section: Nonlinear Quantum Cascade Lasersmentioning

confidence: 99%

The quantum cascade laser: A versatile high-power semiconductor laser for mid-infrared applications

et al. 2005

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Since its invention at Bell Labs in the midcurrently offered commercially by several Lucent licensees. This rapid progress was made possible not only by the extremely active worldwide research on band-engineering, but also by the continuous development of molecular beam epitaxy (MBE), the semiconductor growth technique that enables accurate nanometer control and the reproducibility of complex semiconductor structures. Today, QCL technology promises to have a major impact in fields ranging from chemical sensing to free-space telecommunications.This paper presents an overview of QCL technology, with a particular focus on current research activities at Bell Labs. First, the principles of QCL operation are introduced. Then, material growth,

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“…For the practical realization of the system under debate, we refer readers to Refs. [8,26]. Very recently, Ref.…”

Section: Introductionmentioning

confidence: 96%

“…Possessing an adjustable asymmetry stands as the most remarkable property of this potential. Gurnick and DeTemple first searched the nonlinearities in Morse quantum well and showed 10 to 100 times larger than the bulk materials [26]. Intersubband optical absorption and changes in the index of refraction in this system have been examined by Feng-mei et al [27,28].…”

Section: Introductionmentioning

confidence: 99%

Electric-field-induced Nonlinear Optical Rectification, Second- and Third-harmonic Generation in Asymmetrical Quantum Well

Şakiroğlu

2017

SDÜ Fen Bil Enst Der

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Abstract:The effects of a static electric field on the nonlinear optical rectification, second-and third-harmonic generation in a quantum well described by Morse potential are theoretically investigated. Analytical expressions for the optical coefficients due to intersubband optical transitions with an applied electric field are extracted from the compact-density matrix approach and iterative scheme. Numerical results presented for a typical GaAs quantum well reveal the feasibility of control of optical transitions between the size-quantized subbands. In addition, we have to emphasize the fact that the optical response of the system is remarkably sensitive to the electric field and structural range parameter.

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Synthetic nonlinear semiconductors

Cited by 223 publications

References 26 publications

Quantum Optoelectronics Technical Digest, 1993. Volume 8. Postconference Edition. Summaries of Papers Presented at the Quantum Optoelectronics Topical Meeting Held in Palm Springs, California on March 17-19, 1993.

Quantum Optoelectronics Technical Digest, 1993. Volume 8. Postconference Edition. Summaries of Papers Presented at the Quantum Optoelectronics Topical Meeting Held in Palm Springs, California on March 17-19, 1993.

The quantum cascade laser: A versatile high-power semiconductor laser for mid-infrared applications

Electric-field-induced Nonlinear Optical Rectification, Second- and Third-harmonic Generation in Asymmetrical Quantum Well

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