2012
DOI: 10.1002/sia.5164
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Systematic calculation of the surface excitation parameters for 22 materials

Abstract: Quantitative surface analysis requires knowledge of surface excitations by electrons. These excitations are characterized by the surface excitation parameter (SEP) which represents the surface excitation probability while an electron moves across a solid surface. In this work, a systematic calculation of a SEP database has been performed for 22 materials, including metals, oxides and semiconductors, for electron energies between 100 eV and 5000 eV, and for angles a of incidence/emission between 0.5 o and 89.5 … Show more

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Cited by 12 publications
(7 citation statements)
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“…It is worth noting that the SEP calculated here refers to double surface crossing, with a higher contribution from electrons entering Si as compared with electrons exiting Si. While a comparison with previous literature data is difficult, because different definitions for the SEP were used in the past, our results quite agree with recent data based on the same SEP definition used here.…”
Section: Resultsmentioning
confidence: 99%
“…It is worth noting that the SEP calculated here refers to double surface crossing, with a higher contribution from electrons entering Si as compared with electrons exiting Si. While a comparison with previous literature data is difficult, because different definitions for the SEP were used in the past, our results quite agree with recent data based on the same SEP definition used here.…”
Section: Resultsmentioning
confidence: 99%
“…Therefore, the surface roughness not only affects elastic peak intensity directly but also indirectly affects through surface excitation. Analogous to the definition of surface excitation parameter, where the reduction of elastic peak intensity by the surface excitation is described by a factor e − SEP , a parameter SRP may be introduced such that the intensity of the elastic peak changes by a factor e − SRP due to surface roughness. Here, to quantify only the direct influence of surface topography on the elastically backscattered electrons without including indirect component through surface excitation, SRP is defined according to the ratio of simulated elastic peak intensities between a rough surface and a planar surface by using the bulk model of electron inelastic scattering, as follows: SRP=lnitalicIb,r/italicIb,pwhere I b , r is the simulated elastic peak intensity obtained in our Monte Carlo simulation for a rough surface by considering only bulk excitation and I b , p is the simulated elastic peak intensity obtained in our Monte Carlo simulation for a planar surface by considering only bulk excitation.…”
Section: Resultsmentioning
confidence: 99%
“…(3), the surface-excitation feature may still be present to a small extent in the bulk ELF. Because the Begrenzungs effect is important for semiconductors, such as SiO2, especially at small crossing angles, 73 not only the increase of surface excitations but also reduction of volume excitations is significant in this surface-excitation feature. Therefore, the intensity of this peak increases slightly at larger emission angles where stronger surface excitation is expected; meanwhile, the intensity of the bulk excitation peak at $23 eV gradually decreases.…”
Section: Resultsmentioning
confidence: 99%