Systematic characterization of multi-crystalline silicon String Ribbon wafer

Reimann, C.; Müller, G.; Friеdrich, J.; Lauer, Kevin; Simonis, Anette; Wätzig, Hermann; Krehan, S.; Hartmann, R.; Kruse, Andrea

doi:10.1016/j.jcrysgro.2012.08.022

Cited by 13 publications

(12 citation statements)

References 10 publications

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“…It can hardly be modified during the subsequent solar cell process and may therefore set an upper limit on the minority carrier lifetime and corresponding device efficiency. Areas of high dislocation density have been demonstrated to limit performance in standard mc‐Si and in ribbon Si . If the area fraction containing a high density of recombination‐active structural defects is above a certain threshold “ X ”, it may inhibit achieving the average bulk minority carrier lifetime necessary to support the aspired solar cell efficiency, and ways of reducing the structural defect density during growth will need to be investigated.…”

Section: Millisecond Lifetimes In Unconventional Wafers Enabled By Dementioning

confidence: 99%

Material requirements for the adoption of unconventional silicon crystal and wafer growth techniques for high‐efficiency solar cells

Hofstetter

Cañizo

Wagner

et al. 2015

Progress in Photovoltaics

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Silicon wafers comprise approximately 40% of crystalline silicon module cost and represent an area of great technological innovation potential. Paradoxically, unconventional wafer-growth techniques have thus far failed to displace multicrystalline and Czochralski silicon, despite four decades of innovation. One of the shortcomings of most unconventional materials has been a persistent carrier lifetime deficit in comparison to established wafer technologies, which limits the device efficiency potential. In this perspective article, we review a defect-management framework that has proven successful in enabling millisecond lifetimes in kerfless and cast materials. Control of dislocations and slowly diffusing metal point defects during growth, coupled to effective control of fast-diffusing species during cell processing, is critical to enable high cell efficiencies. To accelerate the pace of novel wafer development, we discuss approaches to rapidly evaluate the device efficiency potential of unconventional wafers from injection-dependent lifetime measurements.

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Section: Millisecond Lifetimes In Unconventional Wafers Enabled By Dementioning

confidence: 99%

Material requirements for the adoption of unconventional silicon crystal and wafer growth techniques for high‐efficiency solar cells

Hofstetter

Cañizo

Wagner

et al. 2015

Progress in Photovoltaics

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“…have been previously studied in cast multi-crystalline silicon ingots by Electron Backscattered Diffraction (EBSD) [15,16]. In particular, the importance of twinning in the development of the grain structure has been highlighted for different solidification processes ranging from directional solidification [17] to ribbon growth [18].…”

Section: Introductionmentioning

confidence: 99%

On the impact of twinning on the formation of the grain structure of multi-crystalline silicon for photovoltaic applications during directional solidification

Riberi-Béridot

Mangelinck‐Noël

Tandjaoui

et al. 2015

Journal of Crystal Growth

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International audienceGrain orientation and competition during growth has been analyzed in directionally solidified multi-crystalline silicon samples. In situ and real-time characterization of the evolution of the grain structure during growth has been performed using synchrotron X-ray imaging techniques (radiography and topography). In addition, Electron Backscattered Diffraction has been used to reveal the crystalline orientations of the grains and the twin relationships. New grains formed during growth have two main origins: random nucleation and twinning. It is demonstrated that the solidified samples are dominated by ∑3 twin boundaries showing that twinning on {111} facets is the dominant phenomenon. Moreover, thanks to the in situ characterization of the growth, it is shown that twins nucleate on {111} facets located at the sides of the sample and at grain boundary grooves. The occurrence of multiple ∑3 twins during growth prevents the initial grains from developing all along the sample, and twin boundaries with higher order coincidence site lattices can form at the encounter of two grains in twin position. The grain competition phenomenon following nucleation and twinning acts as a grain selection mechanism leading to the final grain structure

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“…About 1 mm per minute for horizontal ribbon growth HRG [130]). Solar cells made from liquid phase wafering methods have demonstrated efficiencies in excess of 16% [131]. Although many variations of liquid phase wafering have been considered, the most significant methods have proven to be silicon dendritic web growth (WEB), silicon edge-defined film-fed growth (EFG), string ribbon growth (SRG), and silicon ribbon growth on a substrate (RGS) [132].…”

Section: Liquid Phase Waferingmentioning

confidence: 99%

“…Similarly, in the case of string ribbon growth, a silicon ribbon is formed between two carbon strings, which are pulled upward through holes in a flat crucible with molten silicon. Sovello AG has reported solar cells (untextured surface) fabricated using standard size string ribbon substrate with efficiencies of more than 16% [131].…”

Section: String Ribbon Growth (Srg)mentioning

confidence: 99%

Manufacturing metrology for c-Si photovoltaic module reliability and durability, Part I: Feedstock, crystallization and wafering

Seigneur

Mohajeri

Brooker

et al. 2016

Renewable and Sustainable Energy Reviews

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This article is the first in a three-part series of manufacturing metrology for c-Si photovoltaic (PV) module reliability and durability. Here in Part 1 we focus on the three primary process steps for making silicon substrates for PV cells: (1) feedstock production; (2) ingot and brick production; and (3) wafer production. Each of these steps can affect the final reliability/durability of PV modules in the field with manufacturing metrology potentially playing a significant role. This article provides a comprehensive overview of historical and current processes in each of these three steps, followed by a discussion of associated reliability challenges and metrology strategies that can be employed for increased reliability and durability in resultant modules. Gaps in the current state of understanding in connective metrology data during processing to reliability/durability in the field are then identified along with suggested improvements that should be considered by the PV community.

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Systematic characterization of multi-crystalline silicon String Ribbon wafer

Cited by 13 publications

References 10 publications

Material requirements for the adoption of unconventional silicon crystal and wafer growth techniques for high‐efficiency solar cells

Material requirements for the adoption of unconventional silicon crystal and wafer growth techniques for high‐efficiency solar cells

On the impact of twinning on the formation of the grain structure of multi-crystalline silicon for photovoltaic applications during directional solidification

Manufacturing metrology for c-Si photovoltaic module reliability and durability, Part I: Feedstock, crystallization and wafering

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