Systematic characterization of Silicon IMPATT diode for Monolithic E-band amplifier design

Zhang, Wogong; Oehme, Michael; Kostecki, Konrad; Matthies, K.; Stefani, Viktor; Kasper, E.; Schulze, J.

doi:10.1109/gemic.2015.7107771

Cited by 2 publications

(1 citation statement)

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“…With the proposed model, the IMPATT functionality can be well understood by end-users from the circuit component aspect and practically integrated to PDK as a standard device by circuit design. A monolithic IMPATT amplifier=oscillator design 32) is yet to be demonstrated with the samples reported here.…”

Section: Discussionmentioning

confidence: 99%

S-parameter characterization and lumped-element modelling of millimeter-wave single-drift impact-ionization avalanche transit-time diode

Zhang

Yamamoto

Oehme

et al. 2016

Jpn. J. Appl. Phys.

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Five silicon (Si) p ++ -n % -n ++ samples were grown at various doping concentrations (1.0 ' 10 17 -2.2 ' 10 17 cm %3 ) in an n % layer by using the reduced-pressure CVD technique. By using these samples, 30 ' 2 µm 2 single-drift (SD) impact-ionization avalanche transit-time (IMPATT) diodes were processed with Si-based monolithic millimeter-wave integrated circuit (SIMMWIC) technology. 1,2) The samples within a small process window exhibited a large negative differential resistance at approximately the avalanche frequency, as confirmed by small-signal S-parameter characterization. A model based on depletion width was given to explain the conditions for the appearance of the negative differential IMPATT resistance, which is the basis of millimeter-wave amplifier and oscillator applications. Furthermore, a measurement-based small-signal lumpedelement model was established to describe the IMPATT functionality from the circuit component aspect. This lumped-element model shows a negative differential resistance within a well-defined range in the given element parameters, which can explain the experimental observations.

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Section: Discussionmentioning

confidence: 99%