2016
DOI: 10.1039/c5ta07095c
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Systematic comparison of different dopants in thin film hematite (α-Fe2O3) photoanodes for solar water splitting

Abstract: Thin (~50 nm) film hematite photoanodes doped with different dopants at a concentration of 1 cation% display internal solar to chemical (ISTC) conversion efficiency in the following order: Sn > Nb > Si > Pt > Zr > Ti > Zn > Ni > Mn.

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Cited by 114 publications
(116 citation statements)
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“…XRD spectra results also confirmed the conclusion of Raman studies (Fig. 2b) (JCPDS 33-0664) [37]. Moreover, the XRD diffraction peak located at 38.18°(JCPDS 04-0784) indicates that the crystalline Au .…”
Section: Resultssupporting
confidence: 82%
“…XRD spectra results also confirmed the conclusion of Raman studies (Fig. 2b) (JCPDS 33-0664) [37]. Moreover, the XRD diffraction peak located at 38.18°(JCPDS 04-0784) indicates that the crystalline Au .…”
Section: Resultssupporting
confidence: 82%
“…The ablation of hematite photoanode and tin oxide underlayer thin films was performed in a PLD workstation (PVD Products) with a KrF Excimer Laser at 3 Hz from self-made targets (1 cat% Ti and 1 cat% Zn doped hematite) [13,15] and purchased targets (undoped hematite and SnO 2 , Kurt J. Lesker). An Al 2 O 3 target (purity 99.99%) was mounted to an RF magnetron sputtering gun.…”
Section: Methodsmentioning
confidence: 99%
“…The deposition sequence on the carrier substrate is illustrated in Figure 1 and in more detail in Figure S2 (Supporting Information). We explore different doping profiles in the hematite layers, including homogeneously doped hematite with 1 cat% Ti, [15] and heterogeneous doping profiles comprising 1 cat% Zn-doped hematite layer followed by undoped hematite layer followed by 1 cat% Ti-doped hematite layer. The oxidized Si wafer is coated with two layers of 200 nm thick Al 2 O 3 , the first magnetron sputtered and second deposited by pulsed laser deposition (PLD) (see Figure 1a, Figure S2 in the Supporting Information and the Experimental Section for details).…”
Section: Ultrathin Optical Aborbersmentioning
confidence: 99%
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“…The impurity doping is probably the most common method of modification of photocatalytic semiconductors ,,. The introduction of dopant atoms into the lattice of the semiconductors improves their electronic properties and band structure to ultimately enhance their performance of photocatalysis.…”
Section: General Strategies To Improve the Photoelectrochemical Perfomentioning
confidence: 99%