Systematic investigation of monolithic bipolar transistors irradiated with neutrons, heavy ions and electrons for space applications

Consolandi, C.; D’Angelo, P.; Fallica, G.; Mangoni, R.; Modica, R.; Pensotti, S.; Rancoita, P.G.

doi:10.1016/j.nimb.2006.08.018

Cited by 6 publications

(26 citation statements)

References 37 publications

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“…As a result, a series of vacancies, interstitial atoms and other types of lattice disorder exist in the semiconductor material after irradiation. [19,20] The created defects reduce the minority carrier lifetime and this in turn increases the base current I B of the transistors. [20,21] Two distinct trends exist in the collector current (I C ) after four kinds of heavy ion irradiations.…”

Section: Resultsmentioning

confidence: 99%

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Comparison of total dose effects on SiGe heterojunction bipolar transistors induced by different swift heavy ion irradiation

Sun¹,

Fu²,

Xu³

et al. 2014

Chinese Phys. B

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The degradations in NPN silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs) were fully studied in this work, by means of 25-MeV Si, 10-MeV Cl, 20-MeV Br, and 10-MeV Br ion irradiation, respectively. Electrical parameters such as the base current (I B ), current gain (β ), neutral base recombination (NBR), and Early voltage (V A ) were investigated and used to evaluate the tolerance to heavy ion irradiation. Experimental results demonstrate that device degradations are indeed radiation-source-dependent, and the larger the ion nuclear energy loss is, the more the displacement damages are, and thereby the more serious the performance degradation is. The maximum degradation was observed in the transistors irradiated by 10-MeV Br. For 20-MeV and 10-MeV Br ion irradiation, an unexpected degradation in I C was observed and Early voltage decreased with increasing ion fluence, and NBR appeared to slow down at high ion fluence. The degradations in SiGe HBTs were mainly attributed to the displacement damages created by heavy ion irradiation in the transistors. The underlying physical mechanisms are analyzed and investigated in detail.

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Section: Resultsmentioning

confidence: 99%

“…The neutral base recombination (NBR) is another important physical quantity to characterize displacement damages in bipolar transistors. [15][16][17][18][19] The NBR includes the recombination of injected electrons with holes in the neutral base region via intermediate trap levels (take NPN HBT for example). According to Ref.…”

Section: Resultsmentioning

confidence: 99%

Comparison of total dose effects on SiGe heterojunction bipolar transistors induced by different swift heavy ion irradiation

Sun¹,

Fu²,

Xu³

et al. 2014

Chinese Phys. B

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“…These devices are indeed the essential part of any circuit used in that environment, thus the knowledge of irradiation effects on them is critical (e.g. see [34][35][36][37][38][39][40][41][42] and references therein, see also sections 3.3.2 and 6). For instance, bipolar junction transistors (BJT) have important applications in analogue or mixed-signal IC's and BiCMOS circuits because of their linearity and excellent matching characteristics.…”

Section: Space Radiation Environmentmentioning

confidence: 99%

“…Since in matter the collision energy-loss depends on Z 2 , in the same figure the relative abundances are shown multiplied by Z 2 (e.g. see [41,42,59]). In the cosmic radiation, electrons and positrons are less than about 1% of the proton flux at about 10 GeV (e.g.…”

Section: Solar Heliospheric and Galactic Cosmic Rays In Interplanetar...mentioning

confidence: 99%

“…electrons, protons, α-particles and iron ions above about 1.2 MeV, 22.5 MeV, 22.5 MeV/nucleon and 90 MeV/nucleon, respectively) will be able to inflict radiation damage. Each isotopic element of these penetrating charged particles releases a dose and loses an amount of energy by the NIEL process (see section 3.1, [40][41][42] and references therein), which are non-negligible fractions of those due to the proton component. As a consequence, even for VLSI components that are not heavily-shielded, the proton component is expected to contribute an important, but not dominant, fraction of both the dose and the NIEL deposition.…”

Section: Solar Heliospheric and Galactic Cosmic Rays In Interplanetar...mentioning

confidence: 99%

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Particle interaction and displacement damage in silicon devices operated in radiation environments

2007

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Silicon is used in radiation detectors and electronic devices. Nowadays, these devices achieving submicron technology are parts of integrated circuits of large to very large scale integration (VLSI). Silicon and silicon-based devices are commonly operated in many fields including particle physics experiments, nuclear medicine and space. Some of these fields present adverse radiation environments that may affect the operation of the devices. The particle energy deposition mechanisms by ionization and non-ionization processes are reviewed as well as the radiation-induced damage and its effect on device parameters evolution, depending on particle type, energy and fluence. The temporary or permanent damage inflicted by a single particle (single event effect) to electronic devices or integrated circuits is treated separately from the total ionizing dose (TID) effect for which the accumulated fluence causes degradation and from the displacement damage induced by the non-ionizing energy-loss (NIEL) deposition. Understanding of radiation effects on silicon devices has an impact on their design and allows the prediction of a specific device behaviour when exposed to a radiation field of interest.

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Fluxes and nuclear abundances of cosmic rays inside the magnetosphere using a transmission function approach

Bobík

Boella

Boschini

et al. 2009

Advances in Space Research

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Systematic investigation of monolithic bipolar transistors irradiated with neutrons, heavy ions and electrons for space applications

Cited by 6 publications

References 37 publications

Comparison of total dose effects on SiGe heterojunction bipolar transistors induced by different swift heavy ion irradiation

Comparison of total dose effects on SiGe heterojunction bipolar transistors induced by different swift heavy ion irradiation

Particle interaction and displacement damage in silicon devices operated in radiation environments

Fluxes and nuclear abundances of cosmic rays inside the magnetosphere using a transmission function approach

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